Results 241 to 250 of about 72,346 (309)
Dis3l2 is essential for neural crest survival by modulating Akt signaling. [PDF]
D'Silva S, Prasad T, Kumar M.
europepmc +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Acquisition of neural crest promoted thyroid evolution from chordate endostyle. [PDF]
Stundl J +10 more
europepmc +1 more source
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source
Reaching a cell monolayer at the end of hiPSC differentiation enhances neural crest lineage commitment. [PDF]
Duarte FM +3 more
europepmc +1 more source
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source
Mechanical control of histone serotonylation initiates neural crest migration in vivo
Saraiva JE +6 more
europepmc +1 more source
Cranial neural crest shortage leads to extensive craniofacial anomalies in mice mutant for the NR2F1/2 nuclear receptors. [PDF]
Paulding D +6 more
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source
Characterization of Pumilio gene expression during early neural crest development. [PDF]
Guzman-Espinoza M +4 more
europepmc +1 more source

