Results 231 to 240 of about 37,924 (271)

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

A Lithium Fluoride Interfacial Layer for Low-Voltage and Reliable Perovskite Memristors. [PDF]

open access: yesACS Appl Electron Mater
Pendyala NK   +5 more
europepmc   +1 more source

Neural vs Neuromorphic Interfaces: Where Are We Standing? [PDF]

open access: yesChem Rev
Rana D   +12 more
europepmc   +1 more source

Enhanced 2D MoTe<sub>2</sub> Analogue Switching through Laser Processing and ALD-Passivation for Dual-Function Neuromorphic Devices. [PDF]

open access: yesNano Lett
Radwan M   +10 more
europepmc   +1 more source

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