Results 71 to 80 of about 21,691 (311)

Novel superhard boron nitrides, B2N3 and B3N3: Crystal chemistry and first principles studies

open access: yes
Tetragonal and hexagonal hybrid sp3/sp2 carbon allotropes C5, proposed on the basis of crystal chemistry, were subsequently used as template structures to identify new binary phases of the B N system, specifically tetragonal and hexagonal boron nitrides,
Samir F., Matar   +3 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Recent advances in MXene-based materials for high-performance metal-air batteries

open access: yesGreen Chemistry Letters and Reviews
MXene is a novel type of 2D sheet nanomaterial that shows great application potentials in a variety of fields due to its advantages, such as high electrical conductivities, high surface areas, superior mechanical strength, functional transition metal ...
Ababay Ketema Worku   +4 more
doaj   +1 more source

Structural Classification of Quasi-One-Dimensional Ternary Nitrides

open access: yesInorganics, 2016
This review focuses on the crystal structural features of ternary (mixed-metal) quasi-one-dimensional nitrides i.e., nitrides containing (cation-N3−) coordination polyhedra sharing either corners, edges, or faces, arranged in linear chains, and ...
David Andrew Headspith   +1 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Ultrasensitive Anti‐Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate a highly sensitive nanothermometer using anti‐Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the PL upconversion mechanism.
Sharada Nagarkar   +6 more
wiley   +1 more source

Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy

open access: yes, 2003
textThe application of narrow band gap nitrides to optoelectronic devices is a rapidly growing field, with the promise to supplant existing material systems used for optical fiber communications.
Reifsnider, Jason Miles, 1967-
core  

Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors

open access: yes, 2012
UV and deep-UV emitters based on AlGaN/AlN heterostructures are very inefficient due to the high lattice mismatch of these films with sapphire substrates, leading to high dislocation densities.
Rio Tse-yang Chang
core   +1 more source

A New Approach to the Study of Multi-Pass Welds–Microstructure and Properties of Welded 20-mm-Thick Superduplex Stainless Steel

open access: yesApplied Sciences, 2019
Type 2507 superduplex stainless steel 20 mm in thickness was multi-pass-welded with Gas Metal Arc Welding (GMAW) and Flux-Cored Arc Welding (FCAW) processes. Recommended and higher arc energies and inter-pass temperatures were used.
Maria Asuncion Valiente Bermejo   +3 more
doaj   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

open access: yesAdvanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi   +9 more
wiley   +1 more source

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