Results 201 to 210 of about 11,497 (264)

Terrestrial atmospheric ion implantation occurred in the nearside lunar regolith during the history of Earth's dynamo. [PDF]

Commun Earth Environ
Paramanick S, Blackman EG, Tarduno JA, Carroll-Nellenback J.   +3 more
europepmc   +1 more source

Modeling of Au Migration and Analysis of Au-Doped HgCdTe Photodetectors. [PDF]

ACS Omega
Jin D, Gan Z, Zhou S, Sun Q, Wang X, Zhu L, Li X, Huang J, Lin C.   +8 more
europepmc   +1 more source

Electrical, photocatalytic, and sensory properties of graphene oxide and polyimide implanted with low- and medium-energy silver ions. [PDF]

Beilstein J Nanotechnol
Novák J, Štěpanovská E, Malinský P, Mazánek V, Luxa J, Kentsch U, Sofer Z.   +6 more
europepmc   +1 more source

Basal Plane Activation of SnS₂ Thin-Film by Fluorine Doping for Selective Solar-Driven CO₂ Reduction With Enhanced Quantum Efficiency. [PDF]

Adv Sci (Weinh)
Mamo TT, Qorbani M, Hailemariam AG, Raghunath P, Chu CM, Yuan WH, Sabbah A, Wang YY, Chang SY, Lin MC, Woon WY, Lu YJ, Wu HL, Wong KT, Chen KH, Chen LC.   +15 more
europepmc   +1 more source

Application of Argon Ion Implantation to Improve the Surface Properties of Materials Based on PLA and Lignocellulosic Particles. [PDF]

Molecules
Betlej I, Barlak M, Lipska K, Boruszewski P, Borysiuk P.   +4 more
europepmc   +1 more source

Research Progress and Translational Perspectives of Piezoelectric Materials in Dental Implant Surface Engineering. [PDF]

J Funct Biomater
Cao X, Hu J, Pang Q, Jiang Q, Chen S, Luo B.   +5 more
europepmc   +1 more source

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Plasma source ion implantation of oxygen and nitrogen in aluminum

Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena, 1994
In a preliminary study we compare the surface properties of oxygen and nitrogen implanted in aluminum by the plasma source ion implantation (PSII) technique with beam line implantation of these elements. The acceleration voltage was 35 keV. Using PSII at these energies the areal density of the implanted species saturates at about 2×1017 cm−2 for ...
R Günzel
exaly   +3 more sources

Nitrogen plasma source ion implantation of aluminum

Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena, 1994
Nitrogen plasma source ion implantation has been applied to pure aluminum and aluminum alloy 7075 (Al–Cu–Mg–Zn). Nitrogen implantation modified the surface properties through transformation of the surface to aluminum–nitride (AlN). A uniformly thick (∼0.15 μm), polycrystalline (∼30 nm grain size) and continuous AlN layer was formed on both pure ...
Walter K C
exaly   +2 more sources

The effect of nitrogen ion implantation on tungsten surfaces

Applied Surface Science, 1999
Abstract X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to study the phase, composition and chemical states of elements at the tungsten surface. The measurement results indicate that nitrogen-containing phase of tungsten were formed by nitrogen ion implantation (energy 40 keV, implantation doses of 4×10 17 , 8×10 17 and
D Z Wang, N K Huang
exaly   +2 more sources

Formation of compounds by nitrogen ion implantation in iron

Physica Status Solidi (a), 1983
The phase composition of iron after implantation with doses form 1 × 1016 N+ cm−2 to 1 × × 1018 N+ cm−2 at room temperature is investigated by high-voltage electron microscopy and selected area diffraction. The formation of iron nitride and iron carbonitride phases are considered in dependence of implantation dose. In the dose range from 1 × 1016 up to
B. Rauschenbach, A. Kolitsch
openaire   +1 more source