Results 201 to 210 of about 11,074 (265)

Diamond Sensor Technologies: From Multi Stimulus to Quantum. [PDF]

Micromachines (Basel)
Yip PS, Zhao T, Guo K, Liang W, Xu R, Zhang Y, Lu Y.   +6 more
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Proteomic and metabolomic reveals abnormalities in metabolic processes, epigenetic modifications, oxidative stress, embryonic aneuploidy and implantation in mouse blastocysts derived from in vitro fertilization. [PDF]

J Ovarian Res
Song J, Zhang Y, Yin X, Dong X, Tian H, You W, Liu B, Wu K, Zhang C.   +8 more
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

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Nitrogen plasma source ion implantation of aluminum

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
Nitrogen plasma source ion implantation has been applied to pure aluminum and aluminum alloy 7075 (Al–Cu–Mg–Zn). Nitrogen implantation modified the surface properties through transformation of the surface to aluminum–nitride (AlN). A uniformly thick (∼0.15 μm), polycrystalline (∼30 nm grain size) and continuous AlN layer was formed on both pure ...
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Ion-implanted nitrogen in gallium arsenide

Journal of Applied Physics, 1973
Several gallium arsenide samples were implanted at room temperature with 14N+ ions. Infrared absorption measurements at ≃ 80 °K showed a broad band near 480 cm−1 which is attributed to the localized vibrational mode of NAs,N substitutional on an As site.
A. H. Kachare, W. G. Spitzer, A. Kahan, F. K. Euler, T. A. Whatley   +4 more
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FeN foils by nitrogen ion-implantation

Journal of Applied Physics, 2014
Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride ...
Yanfeng Jiang, Md Al Mehedi, Engang Fu, Yongqiang Wang, Jian-Ping Wang   +4 more
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Characterization of nitrogen-ion-implanted aluminium

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
Abstract Aluminium has been implanted with nitrogen ions at different temperatures. The implanted samples have been characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS).
B. Rauschenbach, K. Breuer, G. Leonhardt
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Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantation

Materials Chemistry and Physics, 1998
Abstract The surface modification of 304 stainless steel ball and tube, silicon wafer and titanium substrates by plasma source ion implantation (PSII) has been investigated. The nitrogen plasma was generated by a radio frequency (13.56 MHz) glow discharge and an ECR microwave discharge.
Koumei Baba, Ruriko Hatada
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