Results 211 to 220 of about 11,497 (264)

Ion implantation of oxygen and nitrogen in CpTi

Progress in Organic Coatings, 2009
A study of the plasma ion implantation (PIII) of commercially pure titanium (CpTi) at a low voltage (
A.E. Muñoz-Castro, R. López-Callejas, E.E. Granda-Gutiérrez, R. Valencia-Alvarado, S.R. Barocio, R. Peña-Eguiluz, A. Mercado-Cabrera, A. de la Piedad Beneitez   +7 more
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Ion Implantation of Nitrogen into Cadmium Sulfide

Journal of Applied Physics, 1972
Ion implantation of nitrogen into n-type cadmium sulfide has been investigated with energy up to 200 keV at dose levels 1015–1017 cm−2. The measurements of I-V, C-V characteristics, and photoelectric properties of diodes made on implanted CdS have given evidence for p-type layer formation.
Y. Shiraki, T. Shimada, K. F. Komatsubara   +2 more
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Effect of Nitrogen Ion Implantation in Copper

Journal of Fusion Energy, 2011
In this study, copper samples with 99% purity implanted by N+ and N2 + ions. Implantation of ions performed at 50 keV and various doses ranging from 1 × 1017 to 1 × 1018 ions/cm2. Morphology of samples’ surface studied by atomic force microscopy.
A. H. Sari, M. K. Salem, A. Shoorche
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Formation of AlN by nitrogen ion implantation

Thin Solid Films, 1983
Abstract The phase composition of aluminium after bombardment with doses from 1 × 1016 to 1 × 1018 N+ ions cm-2 is investigated by high voltage electron microscopy and selected area diffraction. This implantation always produced polycrystalline aluminium nitride (AlN). A thermal treatment to 600 °C did not yield new crystalline phases.
B. Rauschenbach, A. Kolitsch, E. Richter
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Ion-implanted nitrogen in gallium arsenide

Journal of Applied Physics, 1973
Several gallium arsenide samples were implanted at room temperature with 14N+ ions. Infrared absorption measurements at ≃ 80 °K showed a broad band near 480 cm−1 which is attributed to the localized vibrational mode of NAs,N substitutional on an As site.
A. H. Kachare, W. G. Spitzer, A. Kahan, F. K. Euler, T. A. Whatley   +4 more
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Characterization of nitrogen-ion-implanted aluminium

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
Abstract Aluminium has been implanted with nitrogen ions at different temperatures. The implanted samples have been characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS).
B. Rauschenbach, K. Breuer, G. Leonhardt
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Nitrogen doping of diamond by ion implantation

Diamond and Related Materials, 1997
Abstract Nitrogen doping is used to achieve field emission from diamond, and hence it is important to be able to dope diamond with nitrogen in a controlled way, such as that offered by ion implantation. The procedure developed for optimising p-type doping of diamond by B ion-implantation (cold implantation and in situ rapid annealing (CIRA) followed ...
R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, J.P. Lagrange, E. Gheeraert, A. Deneuville, A.T. Collins   +7 more
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FeN foils by nitrogen ion-implantation

Journal of Applied Physics, 2014
Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride ...
Yanfeng Jiang, Md Al Mehedi, Engang Fu, Yongqiang Wang, Jian-Ping Wang   +4 more
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Modification of Polyethyleneterephtalate by Implantation of Nitrogen Ions

Journal of The Electrochemical Society, 1994
The implantation of 90 keV N[sup +] ions into polyethyleneterephtalate (PET) to fluences of 1 [times] 10[sup 14]--1 [times] 10[sup 17] cm[sup [minus]2] was studied. The changes in electrical sheet conductivity and polarity of ion-exposed PET were observed and the structural changes were examined using IR spectroscopy. One degradation process is a chain
V. S̆vorc̆ík, R. Endrs̆t, V. Rybka, V. Hnatowicz, F. C̆erný   +4 more
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Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantation

Materials Chemistry and Physics, 1998
Abstract The surface modification of 304 stainless steel ball and tube, silicon wafer and titanium substrates by plasma source ion implantation (PSII) has been investigated. The nitrogen plasma was generated by a radio frequency (13.56 MHz) glow discharge and an ECR microwave discharge.
Koumei Baba, Ruriko Hatada
openaire   +1 more source