Results 211 to 220 of about 11,074 (265)

Ion Implantation of Nitrogen into Cadmium Sulfide

Journal of Applied Physics, 1972
Ion implantation of nitrogen into n-type cadmium sulfide has been investigated with energy up to 200 keV at dose levels 1015–1017 cm−2. The measurements of I-V, C-V characteristics, and photoelectric properties of diodes made on implanted CdS have given evidence for p-type layer formation.
Y. Shiraki, T. Shimada, K. F. Komatsubara   +2 more
openaire   +1 more source

Nitrogen ion implantation into ZrN thin films

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
Abstract Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi 1 + x . Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations.
N. Kobayashi, H. Tanoue
openaire   +1 more source

Ion implantation induced nitrogen defects in GaN

Journal of Physics D: Applied Physics, 2015
Ion implantation induced defects in GaN are investigated by using ion beam analysis and scanning spreading resistance microscopy (SSRM) techniques. Different GaN samples were implanted with 300 keV argon (Ar) and 200 keV hydrogen (H) ions, respectively.
Muhammad Usman, Anders Hallén, Aftab Nazir   +2 more
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Tribological properties of nitrogen ion implanted steel

Wear, 2012
Abstract Nitrogen ions (N + ) with three different doses were implanted on the AISI 304 LN steel samples under high vacuum at room temperature. Dose dependent morphological and structural changes were observed in the specimen. Structural changes were triggered by formation of nitrides; irradiation induced surface segregation of carbon and deposition ...
N. Kumar, S. Kataria, S. Dash, S.K. Srivastava, C.R. Das, P. Chandramohan, A.K. Tyagi, K.G.M. Nair, Baldev Raj   +8 more
openaire   +1 more source

Combined Oxygen - Nitrogen Ion Implants Into Ti6A14V

MRS Proceedings, 1988
ABSTRACTThe alloy preferred for medical protheses, Ti6A14V, was ion implanted with oxygen and nitrogen alone and in combination at varying energies, 25 to 120 keV, and varying dose levels, 1017 to 1018 ions/cm2. Measurements were made of microhardness, corrosion resistance, chemical bonding of implanted species, and (with UHMWpo lyethylene) pin-on-disk
Anton Greenwald, James Daly, John Meroth, Richard Oliver, Piran Sioshansi, Clive Clayton   +5 more
openaire   +1 more source

Effect of Nitrogen Ion Implantation in Copper

Journal of Fusion Energy, 2011
In this study, copper samples with 99% purity implanted by N+ and N2 + ions. Implantation of ions performed at 50 keV and various doses ranging from 1 × 1017 to 1 × 1018 ions/cm2. Morphology of samples’ surface studied by atomic force microscopy.
A. H. Sari, M. K. Salem, A. Shoorche
openaire   +1 more source

Formation of AlN by nitrogen ion implantation

Thin Solid Films, 1983
Abstract The phase composition of aluminium after bombardment with doses from 1 × 1016 to 1 × 1018 N+ ions cm-2 is investigated by high voltage electron microscopy and selected area diffraction. This implantation always produced polycrystalline aluminium nitride (AlN). A thermal treatment to 600 °C did not yield new crystalline phases.
B. Rauschenbach, A. Kolitsch, E. Richter
openaire   +1 more source

Silicon Planar Devices Using Nitrogen Ion Implantation

Japanese Journal of Applied Physics, 1976
Nitrogen implanted polycrystalline silicon layers are used as an oxidation mask in place of conventional silicon nitride layers for the fabrication of planar structured MOS FET's. The stress effect and anomalous oxidation behavior arising from the conventional LOCOS process are thoroughly eliminated.
Yasuo Wada, Mikio Ashikawa
openaire   +1 more source

Nitrogen doping of diamond by ion implantation

Diamond and Related Materials, 1997
Abstract Nitrogen doping is used to achieve field emission from diamond, and hence it is important to be able to dope diamond with nitrogen in a controlled way, such as that offered by ion implantation. The procedure developed for optimising p-type doping of diamond by B ion-implantation (cold implantation and in situ rapid annealing (CIRA) followed ...
R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, J.P. Lagrange, E. Gheeraert, A. Deneuville, A.T. Collins   +7 more
openaire   +1 more source

Low-energy nitrogen ion implantation of InSb

Journal of Applied Physics, 2004
The modification of the electronic properties of InSb by implantation of low-energy N2+ ions and annealing have been investigated. A non-uniform electron density depth profile is observed in the near-surface region. Detailed measurements of the conduction-band electron-plasma frequency as a function of temperature combined with carrier statistics ...
I. Mahboob, T. D. Veal, C. F. McConville
openaire   +1 more source