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The effect of nitrogen ion implantation on the properties of coatings
Transactions of the IMF, 1987Etude de l'influence de l'implantation ionique d'azote sur les proprietes mecaniques du chrome dur et des alliages cobalt-tungstene. Des essais sont effectues pour examiner les caracteristiques de frottement et d'usure des revetements et pour determiner les doses optimales d'azote necessaires pour obtenir les meilleures caracteristiques des ...
J. I. Oñate, J. K. Dennis, S. Hamilton
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Nitrogen ion implantation into ZrN thin films
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989Abstract Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi 1 + x . Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations.
N. Kobayashi, H. Tanoue
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
Abstract Diamagnetic and paramagnetic point detects were examined in SiO2 glasses implanted with Si and/or N ions to doses from 3 × 1015 to 6 × 1016 ions/cm2 at an energy of 160 keV. The concentrations of Si-Si bonds were close to those of implanted ions at each dose in the Si-implanted samples, whereas the concentration ratio of the Si-Si bonds ...
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Abstract Diamagnetic and paramagnetic point detects were examined in SiO2 glasses implanted with Si and/or N ions to doses from 3 × 1015 to 6 × 1016 ions/cm2 at an energy of 160 keV. The concentrations of Si-Si bonds were close to those of implanted ions at each dose in the Si-implanted samples, whereas the concentration ratio of the Si-Si bonds ...
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Pulsed ion implantation of nitrogen in pure titanium
Radiation Effects and Defects in Solids, 1994Abstract High current, short length ion beam pulses appear to be a new alternative for surface property modification of solids, due to the combined effect of ion implantation with induced fast heating-cooling which this process presents. The repetitive pulsed nitrogen implantation (with a low energy plasma focus) of pure titanium with different pulse ...
J. N. Feugeas +4 more
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Wear and Friction of Nitrogen Ion Implanted Steel
Journal of Lubrication Technology, 1983A pin on disk wear test apparatus was used to evaluate wear and friction properties for nitrogen ion implanted and non-ion implanted steel disks in the presence of a lubricant. Both AISI/1018 mild steel and 304 stainless steel were examined. Typical fluence levels for ion implantation were above 1017 ions/cm2.
J. A. Kirk +2 more
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Effects of tin ion and nitrogen ion implantation on the oxidation of titanium
Materials Science and Engineering, 1987Abstract The high temperature oxidation of ion-implanted titanium was studied using the scanning electron microscopy, X-ray photoelectron spectroscopy and Rutherford back-scattering techniques. The specimens were implanted with either tin ions (Sn + ) or nitrogen ions (N 2 + ) or a combination of the two, to doses of between 10 15 and 10 17 ions ...
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Diffusion of nitrogen in ion-implanted chromium and tungsten
Applied Physics A Solids and Surfaces, 1984The diffusion of N in the group VI B metals Cr and W has been studied in the previously uninvestigated temperature ranges 300°–550 °C (Cr) and 600°–800 °C (W) using ion-beam techniques. Diffusion couples were created by ion-implantation. The timedependent diffusion profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique ...
J. Keinonen, J. R�is�nen, A. Anttila
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Oxygen-Nitrogen Interactions in Ion-Implanted Silicon
MRS Proceedings, 1985AbstractInteraction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen
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Effect of nitrogen ion-implantation on silicate glasses
Journal of Non-Crystalline Solids, 1982Abstract The microhardness numbers and refractive index of various nitrogen ion-implcated silicate glasses correlated with dose rates were studied. Samples of glass had been implanted with N + ions at dose rates from 3 × 10 14 to 10 18 ions/cm 2 and beam currents up to 150 μA/cm 2 at room temperature.
Chengyu Wang, Ying Tao, Shuchu Wang
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Low-energy nitrogen ion implantation of InSb
Journal of Applied Physics, 2004The modification of the electronic properties of InSb by implantation of low-energy N2+ ions and annealing have been investigated. A non-uniform electron density depth profile is observed in the near-surface region. Detailed measurements of the conduction-band electron-plasma frequency as a function of temperature combined with carrier statistics ...
I. Mahboob, T. D. Veal, C. F. McConville
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