Results 231 to 240 of about 11,074 (265)

Electrochemical studies on nitrogen ion implanted Ti6Al4V alloy

Anti-Corrosion Methods and Materials, 1998
Nitrogen ion implantation on a Ti6Al4V alloy with 70KeV energy was carried out at different doses ranging from 5 × 1015to 2.5 × 1017ions/cm2. The implanted samples were subjected to open circuit potential/time measurement and cyclic polarization studies to evolve the optimum dose which can give good corrosion resistance in a simulated body fluid ...
T. Sundararajan, S. Rajeswari, M. Subbaiyan, U. Kamachi Mudali, K.G.M. Nair   +4 more
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Tribological properties of nitrogen ion implanted WC-Co

Wear, 1997
Abstract The effects of nitrogen ion implantation on the properties and the characters of WC-Co cemented carbides were studied. The implanted layers were characterized by means of AES and XRD. The friction wear tests were undertaken with a pin-on-disc friction-wear tester.
null Jia Shu Sun, null Peng Yan, null Xiao Bing Sun, null Guanyan Lu, null Furun Liu, null Weiyi Ye, null Jian Qiu Yang   +6 more
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Modification of Aluminum Properties; by Nitrogen Ion Implantation

Materials and Manufacturing Processes, 1998
Abstract The formation of aluminum nitride precipitates using nitrogen ion implantation and the resulting changes of mechanical properties were studied. The modifications depended on the implantation parameters such as fluence, energy and temperature during implantation. Nitrogen implantation was carried out in pure aluminum for single and multi energy
E Leblond, S. Fayeulle, D. Treheux, N. Moncoffre, G. Marest, G. Fantozzi   +5 more
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Structural Properties of Nitrogen-Ion Implanted ZnO Nanorods

Journal of the Korean Physical Society, 2007
The structural deformation of nitrogen-ion implanted ZnO nanorods was investigated. Vertically aligned ZnO nanorods were synthesized on Al2O3 substrates, both with and without buffer layers, using catalyst-free metal organic chemical vapor deposition (MOCVD).
Park, SH, Kim, SH, Han, SW
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Modification of Polyethyleneterephtalate by Implantation of Nitrogen Ions

Journal of The Electrochemical Society, 1994
The implantation of 90 keV N[sup +] ions into polyethyleneterephtalate (PET) to fluences of 1 [times] 10[sup 14]--1 [times] 10[sup 17] cm[sup [minus]2] was studied. The changes in electrical sheet conductivity and polarity of ion-exposed PET were observed and the structural changes were examined using IR spectroscopy. One degradation process is a chain
V. S̆vorc̆ík, R. Endrs̆t, V. Rybka, V. Hnatowicz, F. C̆erný   +4 more
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Surface modification of polytetrafluoroethylene by nitrogen ion implantation

Applied Surface Science, 2002
Abstract Polytetrafluoroethylene (PTFE) was implanted in vacuum by N ions. The influence of experimental parameters was studied by varying ion energy from 2 to 20 keV with the same fluence of 1.4×10 17 ions / cm 2 . The ion energy strongly affected the surface composition, microstructure, and wettability of PTFE.
Jizhong Zhang, Xiaojun Yu, Hengde Li, Xianghuai Liu   +3 more
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Ion implantation of oxygen and nitrogen in CpTi

Progress in Organic Coatings, 2009
A study of the plasma ion implantation (PIII) of commercially pure titanium (CpTi) at a low voltage (
A.E. Muñoz-Castro, R. López-Callejas, E.E. Granda-Gutiérrez, R. Valencia-Alvarado, S.R. Barocio, R. Peña-Eguiluz, A. Mercado-Cabrera, A. de la Piedad Beneitez   +7 more
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Nitrogen Ion Implantation into α-SiC Epitaxial Layers

physica status solidi (a), 1997
N + implantation into p-type α-SiC (6H-SiC, 4H-SiC) epilayers at room and elevated temperatures, mainly obtained by the authors' group, has been reviewed. Since recrystallization of SiC is difficult, the implantation-induced damage should be minimal during implantation to achieve higher electrical activation.
T. Kimoto, N. Inoue
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High fluence implantation of nitrogen ions into titanium

Materials Science and Engineering, 1985
Abstract Polycrystalline targets of titanium were implanted with nitrogen ions at energies from 30 to 60 ke V and with doses as high as 1 × 1018 N+ ions cm−2 at room temperature. The distributions of nitrogen and carbon were determined by Auger electron spectroscopy.
K Hohmuth, B Rauschenbach
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Defect properties of ion-implanted nitrogen in ZnSe

Physical Review B, 2001
Lattice sites and annealing behavior of implanted ${}^{12}\mathrm{N}$ in semi-insulating ZnSe are investigated by use of \ensuremath{\beta} radiation detected nuclear magnetic resonance (\ensuremath{\beta}-NMR). For room-temperature implantation only a small part of the N impurities is found at sites with full ${T}_{d}$ symmetry; this fraction is ...
K. Marbach, B. Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, P. Meier, D. Peters, H. Thieß, H. Ackermann, H.-J. Stöckmann, W.-D. Zeitz, H. Wenisch, D. Hommel, G. Landwehr   +14 more
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