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Characterization of drills implanted with nitrogen plasma immersion ion implantation

Surface and Coatings Technology, 1998
Abstract Plasma immersion ion implantation (PIII) is a method which retains the advantages of conventional beam line implantation while circumventing the limitations like beam-rastering and target handling for large objects with a complex geometry. However, an electric field which is too high, especially at small tips or sharp edges, induces arcing ...
Mändl, S.   +5 more
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Nitrogen profiles in materials implanted via plasma-based ion implantation

Surface and Coatings Technology, 2002
Abstract The lifetime of metallic components can be drastically increased by surface treatments ensuring a low friction coefficient, surface hardening and an anticorrosion coating. A promising method for such surface modifications is plasma-based ion implantation (PBII) of nitrogen.
Lacoste, A.   +6 more
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Fatigue Life Improvement of Nitrogen-Ion–Implanted Pedicle Screws

Spine, 1990
An experimental study of the fatigue life of pedicle screws and their nitrogen-ion-implanted counterparts was conducted. Nitrogen-ion implantation parameters were varied in the first part of the study to obtain the best implantation characteristics. Using this optimal parameter for N(+)-implantation, the performance of two matched groups were compared ...
Y K, Liu, G O, Njus, P A, Bahr, P, Geng
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Porous silicon implanted with nitrogen by plasma immersion ion implantation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
Abstract Porous silicon (PS) samples were prepared on (1 0 0) monocrystalline silicon wafers and implanted with nitrogen by plasma immersion ion implantation (PIII). Characterization by Auger electron spectroscopy (AES) showed the presence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sample surfaces.
Beloto, A. F.   +6 more
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Nitrogen plasma immersion ion implantation into high speed steel

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Abstract High speed steel (HSS) is a standard material for cutting tools with operation temperatures up to 500°C. Plasma immersion ion implantation (PIII) is a technique suitable for surface modifications at moderate temperatures around 300–400°C. The diffusion behaviour of nitrogen during PIII and subsequent annealing is investigated to see whether ...
Mändl, S.   +3 more
openaire   +3 more sources

Formation of compounds by nitrogen ion implantation in iron

Physica Status Solidi (a), 1983
The phase composition of iron after implantation with doses form 1 × 1016 N+ cm−2 to 1 × × 1018 N+ cm−2 at room temperature is investigated by high-voltage electron microscopy and selected area diffraction. The formation of iron nitride and iron carbonitride phases are considered in dependence of implantation dose. In the dose range from 1 × 1016 up to
B. Rauschenbach, A. Kolitsch
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New Technique for Monitoring Nitrogen Ion Implantation Dose

Surface Engineering, 1987
A new dosimetry technique for use in industrial nitrogen ion implantation is described. This relies on colour changes induced in anodized tantalum. Visual inspection of these dosimeters, by comparison with a set of calibrated standards, provides an accuracy of around ±20% over the range 1 × 1017-5 × 1017 nitrogen ions cm −2.
P. R. Gardner   +2 more
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Surface microanalytical studies of nitrogen ion-implanted steel

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
Abstract Five types of industrial steels, 1018, 52100, M-2, 440C, and 304 were ion implanted with nitrogen and subjected to surface microanalysis by three independent surface techniques: AES, RBS, and SIMS. The results provided understanding for earlier observations of the properties of various types of steel after nitrogen implantation.
Charles G. Dodd   +4 more
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Nitrogen ion implantation in single wall carbon nanotubes

Surface Science, 2007
Abstract We report an X-ray photoemission and electron energy loss study on 3 keV N 2 + ion implantation in single wall carbon nanotubes. Our results show that nitrogen atoms can bind to carbon in tetrahedral sp3, defects related pyridine-like, and triangular sp2 configurations and such bondings are stable for annealing up to 650 K.
XU, Fang   +6 more
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Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

MRS Proceedings, 1985
AbstractInteraction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen
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