Results 221 to 230 of about 11,497 (264)
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Journal of Applied Physics, 1994
The in-depth concentration distribution or depth profile of nitrogen implanted into silicon wafer substrates using plasma ion implantation (PII) is studied using secondary-ion-mass spectrometry and Auger electron spectroscopy sputtered depth profiling.
John J. Vajo +4 more
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The in-depth concentration distribution or depth profile of nitrogen implanted into silicon wafer substrates using plasma ion implantation (PII) is studied using secondary-ion-mass spectrometry and Auger electron spectroscopy sputtered depth profiling.
John J. Vajo +4 more
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Implantation of nitrogen ions in InSb and InAs thin films
Physica Status Solidi (a), 1980Results on the effect of 14N2+ ion implantation on the electrical properties of thin films of InSb and InAs are reported. Amorphous and crystalline films (≈ 200 nm) formed by flash evaporation on glass substrates in a vacuum of 6.7 × 10−4 Pa, are implanted by 50 keV nitrogen ions at room temperature with doses of ≈ 1021 ions/m2.
A. K. Sharma, P. Jayarama Reddy
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Characterization of drills implanted with nitrogen plasma immersion ion implantation
Surface and Coatings Technology, 1998Abstract Plasma immersion ion implantation (PIII) is a method which retains the advantages of conventional beam line implantation while circumventing the limitations like beam-rastering and target handling for large objects with a complex geometry. However, an electric field which is too high, especially at small tips or sharp edges, induces arcing ...
Mändl, S. +5 more
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Porous silicon implanted with nitrogen by plasma immersion ion implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001Abstract Porous silicon (PS) samples were prepared on (1 0 0) monocrystalline silicon wafers and implanted with nitrogen by plasma immersion ion implantation (PIII). Characterization by Auger electron spectroscopy (AES) showed the presence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sample surfaces.
Beloto, A. F. +6 more
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Wear, 2010
Abstract A 20CrMo alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of 1.0 × 10 17 to 6.0 × 10 17 ions cm −2 . Electron Probe Micro-Analysis (EPMA) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a multi-purpose wear tester.
H.B. He, H.Y. Li, S.K. Lyu
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Abstract A 20CrMo alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of 1.0 × 10 17 to 6.0 × 10 17 ions cm −2 . Electron Probe Micro-Analysis (EPMA) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a multi-purpose wear tester.
H.B. He, H.Y. Li, S.K. Lyu
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Effects of ion-implantation with nitrogen ion on microstructures in deformed iron
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997Abstract The implantation with nitrogen ions accelerated at 150 kV has been performed on sheets of high purity iron (99.99%) annealed for 1.8 ks at 773 K and/or cold-rolled with 90% reduction. Dose of the ions was changed in the range of 8 × 1018 to 4 × 1020 N2+/m2.
A. Yamamoto +4 more
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Modification of Aluminum Properties; by Nitrogen Ion Implantation
Materials and Manufacturing Processes, 1998Abstract The formation of aluminum nitride precipitates using nitrogen ion implantation and the resulting changes of mechanical properties were studied. The modifications depended on the implantation parameters such as fluence, energy and temperature during implantation. Nitrogen implantation was carried out in pure aluminum for single and multi energy
E Leblond +5 more
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Successive implantation of aluminium by carbon and nitrogen ions
Surface and Coatings Technology, 1998Abstract The results of Rutherford backscattering analysis and transmission electron microscopy of the surface layer of aluminium after monoelemental and successive implantation by carbon and nitrogen ions are presented in this work. The energy of implanted ions was 40 keV, the implantation dose varied in the range (3.3–6.5)×10 17 ions cm −2 .
Uglov, V. V. +6 more
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Defect properties of ion-implanted nitrogen in ZnSe
Physical Review B, 2001Lattice sites and annealing behavior of implanted ${}^{12}\mathrm{N}$ in semi-insulating ZnSe are investigated by use of \ensuremath{\beta} radiation detected nuclear magnetic resonance (\ensuremath{\beta}-NMR). For room-temperature implantation only a small part of the N impurities is found at sites with full ${T}_{d}$ symmetry; this fraction is ...
K. Marbach +14 more
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High fluence implantation of nitrogen ions into titanium
Materials Science and Engineering, 1985Abstract Polycrystalline targets of titanium were implanted with nitrogen ions at energies from 30 to 60 ke V and with doses as high as 1 × 1018 N+ ions cm−2 at room temperature. The distributions of nitrogen and carbon were determined by Auger electron spectroscopy.
K Hohmuth, B Rauschenbach
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