Results 1 to 10 of about 178,893 (267)

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications [PDF]

Micromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi, Jihyun Kim, Min Je Kim, Hwa Sook Ryu, Han Young Woo, Jeong Ho Cho, Joohoon Kang   +6 more
doaj   +2 more sources

Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications [PDF]

Micromachines, 2023
In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated ...
Hongyang Hu, Chuancai Feng, Haiyang Zhou, Danian Dong, Xiaoshan Pan, Xiwei Wang, Lu Zhang, Shuaiqi Cheng, Wan Pang, Jing Liu   +9 more
doaj   +2 more sources

Heterogeneous III-V/Si micro-ring laser array with multi-state non-volatile memory for ternary content-addressable memories [PDF]

Nature Communications
In this work, we introduce programmable memory elements embedded within III-V/Si light sources which facilitate non-volatile wavelength tuning. These non-volatile III-V/Si micro-ring lasers (MRLs) exhibit non-volatile wavelength shifts of  ~80 pm with ...
Stanley Cheung, Yanir London, Yuan Yuan, Bassem Tossoun, Yiwei Peng, Yingtao Hu, Thomas Van Vaerenbergh, Di Liang, Chong Zhang, Geza Kurczveil, Raymond G. Beausoleil   +10 more
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Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film. [PDF]

Micromachines (Basel), 2020
open access articleIn this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells.
Salaoru I, Pantelidis CC.
europepmc   +3 more sources

Memristive Non-Volatile Memory Based on Graphene Materials [PDF]

Micromachines, 2020
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in ...
Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao   +8 more
doaj   +2 more sources

Volatile and Non-Volatile Single Electron Memory [PDF]

Журнал нано- та електронної фізики, 2013
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM).
A. Touati , A. Kalboussi 
doaj   +3 more sources

A ferroelectric fin diode for robust non-volatile memory [PDF]

Nature Communications
Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances.
Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian, Junhao Chu, Chungang Duan   +22 more
doaj   +2 more sources

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

Micromachines, 2022
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov, Dmitry Zhevnenko, Fedor Meshchaninov, Vladislav Kozhevnikov, Pavel Sattarov, Sergey Kuznetsov, Alikhan Magomedrasulov, Oleg Telminov, Evgeny Gornev   +8 more
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Introduction to the Special Section on the 2019 IEEE S3S Conference

IEEE Journal of the Electron Devices Society, 2020
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

The trend of emerging non-volatile TCAM for parallel search and AI applications

Chip, 2022
In this paper, we review the recent trends in parallel search and artificial intelligence (AI) applications using emerging non-volatile ternary content addressable memory (TCAM). Firstly, the principle and development of four typical emerging memory used
Ke-Ji Zhou, Chen Mu, Bo Wen, Xu-Meng Zhang, Guang-Jian Wu, Can Li, Hao Jiang, Xiao-Yong Xue, Shang Tang, Chi-Xiao Chen, Qi Liu   +10 more
doaj   +1 more source