Results 91 to 100 of about 178,893 (267)

Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]

Journal of Systemics, Cybernetics and Informatics, 2018
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr   +2 more
doaj  

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. [PDF]

Micromachines (Basel), 2023
Xu Z, Bi J, Liu M, Zhang Y, Chen B, Zhang Z.   +5 more
europepmc   +1 more source

Porous Coatings by Vapor Sublimation and Deposition for Molecular Channeling and Filtration in an Interstitial Fluid Microfiltration Device

Advanced Healthcare Materials, EarlyView.
A vapor‐based porous coating applied within nitinol tubes demonstrated complete suppression of cellular and tissue ingrowth, overcoming a major limitation of implantable interstitial fluid collection devices. Molecular channeling and diffusion are analyzed with probe molecules, showing reliable transport in vitro and in vivo. The coating also achieved >
Yu‐Ming Chang, Chi‐Yu Huang, Yi‐Jia Ke, Yi‐Wei Lin, Yen‐Hui Chan, Ying‐Chang Lu, Yu‐Chih Chiang, Chen‐Chi Wu, Hsien‐Yeh Chen   +8 more
wiley   +1 more source

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

Engineering Reports
This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our
Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari   +3 more
doaj   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Advanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra, Alberto M. Ruiz, Marta Galbiati, Álvaro Cortés‐Flores, Daniel Brown, Esteban Zamora‐Amo, Lisa Almonte, Andrei Shumilin, Juan Salvador‐Sánchez, Ana Pérez‐Rodríguez, Iñaki Orue, Andrés Cantarero, Andres Castellanos‐Gomez, Federico Mompeán, Mar Garcia‐Hernandez, Efrén Navarro‐Moratalla, Enrique Diez, Mario Amado, José J. Baldoví, M. Reyes Calvo   +19 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Asymmetry of the Ferroelectric Phase Transition in BaTiO3

Advanced Materials, EarlyView.
Phase transitions are typically assumed to behave identically in forward and reverse. This work shows that in the ferroelectric material barium titanate this is not true: heating drives an abrupt, first‐order jump, while cooling gives a smooth, continuous change.
Asaf Hershkovitz, Elangovan Hemaprabha, Rajesh Mandal, Pravin Kavle, Jamil Tanus, Maya Barzilay, Ching‐Che Lin, David Spirito, Semën Gorfman, Bo Wang, Ignacio J. Villar‐García, Neus Domingo, Long‐Qing Chen, Lane W. Martin, Yachin Ivry   +14 more
wiley   +1 more source

Non-Volatile Memory and Synaptic Characteristics of TiN/CeO_x/Pt RRAM Devices. [PDF]

Materials (Basel), 2022
Ha H, Pyo J, Lee Y, Kim S.
europepmc   +1 more source