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Graphene Based Non‐Volatile Memory Devices
Advanced Materials, 2014With the continuous advance of modern electronics, the demand for non‐volatile memory cells rapidly grows. As a promising material for post‐silicon electronic applications, graphene non‐volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties.
Xiaomu, Wang +2 more
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Ferroelectric non-volatile memory
Proceedings of the IEEE 1988 National Aerospace and Electronics Conference, 2003The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM.
J. Evans, R. Womack, D. Toisch
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Non-volatile memory and disks:
Proceedings of the 2007 ACM workshop on Computer security architecture, 2007As computing models change, so too do the demands on storage. Distributed and virtualized systems introduce new vulnerabilities, assumptions, and performance requirements on disks. However,traditional storage systems have very limited capacity to implement needed "advanced storage" features such as integrity and dataisolation.
Kevin R. B. Butler +2 more
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Embedded non-volatile memories
Proceedings of the 20th annual conference on Integrated circuits and systems design, 2007This tutorial covers trends in embedded non-volatile memories including details of issues for scaling NAND and NOR flash and descriptions of scaled flash memory technologies and various evolutionary flash memory technologies such as trapping site storage memory including SONOS/MONOS and Nanocrystal memory.
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Ferroelectrics for non-volatile memories
Microelectronic Engineering, 1992In the late 1980s the interest in ferroelectric materials for memory applications has been renewed on the basis of concepts where ferroelectric thin film capacitors are embedded in Integrated Circuit processes. This paper discusses the application of ferroelectric thin films in memories. First ferroelectric thin film capacitors are reviewed followed by
R. Cuppens +2 more
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Non volatile semiconductor memories
1981 International Electron Devices Meeting, 1981This paper reviews progress in the development of nonvolatile semiconductor memories todate. A comparison of basic device concepts, charge transfer mechanisms and regions of charge transport provides the basis for projection of future trends and limitations, with emphasis on difficulties in research, development and product implementation of new device
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Memory devices—Non-volatile memories
In this entry, the most important non-volatile memories used for a wide variety of applications are presented, with detailed information on their structural and functional properties. The first part addresses charge-based memories, including read-only memories, electrically programmable read-only memories, electrically erasable and programmable read ...Gnani, Elena, Baccarani, Giorgio
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Emerging non-volatile memory technologies
ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705), 2004The concept, the status and the respective challenges of the emerging non-volatile memory technologies are described. After discussing the magneto-resistive random access memory technology, the ferro-electric random access memory technology and the phase change memory technology, their key properties are summarized and compared to the well-established ...
G. Muller +3 more
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Resistance Non-volatile Memory – RRAM
MRS Proceedings, 2007AbstractElectric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM).
Alex Ignatiev +6 more
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Non-volatile Bipolar Transistor Memory
2020In the past few years, due to the limitations of silicon-based materials, the miniaturization of devices has gradually slowed down, even reaching its limit. Finding new breakthroughs for the miniaturization of memory is an important direction for development of the electronics industry.
Mengyao Li, Yating Zhang
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