Results 41 to 50 of about 178,824 (287)

Extending Non-Volatile Operation to DRAM Cells

IEEE Access, 2013
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei, Kazuteru Namba, Fabrizio Lombardi   +2 more
doaj   +1 more source

Accelerating K-mer Frequency Counting with GPU and Non-Volatile Memory

, 2017
The emergence of Next Generation Sequencing (NGS) platforms has increased the throughput of genomic sequencing and in turn the amount of data that needs to be processed, requiring highly efficient computation for its analysis.
Cadenelli, Nicola, Carrera, David, Polo, Jorda   +2 more
core   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

A survey of persistent index data structures on non-volatile memory

大数据, 2021
With non-volatile memory becoming commercially available, the design and implementation of traditional storage systems need a fundamental change since they can not fully utilize the performance of non-volatile memory.To build a highthroughput, low ...
Yongfeng WANG, Zhiguang CHEN
doaj  

Unleashing the Power of Machine Learning in Nanomedicine Formulation Development

Advanced Functional Materials, EarlyView.
A random forest machine learning model is able to make predictions on nanoparticle attributes of different nanomedicines (i.e. lipid nanoparticles, liposomes, or PLGA nanoparticles) based on microfluidic formulation parameters. Machine learning models are based on a database of nanoparticle formulations, and models are able to generate unique solutions
Thomas L. Moore, Cristiano Pesce, Antonietta Greco, Claudia Pisante, Greta Avancini, Valentina Di Francesco, Yosi Shamay, Paolo Decuzzi   +7 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout

IEEE Open Journal of Nanotechnology
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct ...
Roopesh Singh, Shivam Verma
doaj   +1 more source

Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device

Results in Physics, 2022
Here, we have identified the volatile and non-volatile traits of Pt/TaOx/TiN device through the various electrical experiments by controlling the compliance current (CC) and determined the availability of this device as a memristor.
Seokyeon Yun, Jongmin Park, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

Fine-Grain Checkpointing with In-Cache-Line Logging

, 2019
Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the ...
Aksun, David T., Avni, Hillel, Cohen, Nachshon, Larus, James R.   +3 more
core   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source