Results 61 to 70 of about 178,824 (287)

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

Advanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante, Valeria Demontis, Karl Jonas Riisnaes, Lam Hoi Tung, Sebastiano De Stefano, Daniela Marongiu, Adolfo Mazzotti, Aditya Bhardwaj, Francesco Mattana, Elisa Pili, Selene Matta, Federico Paolucci, Michele Saba, Andrea Mura, Giovanni Bongiovanni, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo   +17 more
wiley   +1 more source

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis.

PLoS ONE
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power,
Haroon Rasheed S, Rajeev Pankaj Nelapati
doaj   +1 more source

A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications [PDF]

, 2000
This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications.
Atwater, H. A., Baumann, F., Bude, J., Cirelli, R., De Blauwe, J. W., Ferry, E., Flagan, R. C., Grazul, J. L., Green, M. L., Hillenius, S. J., Kerber, A., Kim, Y., Klemens, F., Lee, J. T. C., Mansfield, W., Ostraat, M. L., Sorsch, T., Weber, G.   +17 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Non-volatile optoelectronic memory based on a photosensitive dielectric

Nature Communications, 2023
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability.
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei   +8 more
doaj   +1 more source

The Impact of On-chip Communication on Memory Technologies for Neuromorphic Systems

, 2018
Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of neural ...
Manohar, Rajit, Moradi, Saber
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

Advanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov, Patrick Fesser, Boris A. Bulgakov, Ulrich S. Schubert   +3 more
wiley   +1 more source

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source