Results 71 to 80 of about 178,893 (267)
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott +6 more
core
Electron–Matter Interactions During Electron Beam Nanopatterning
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima +2 more
wiley +1 more source
In this study, the preparation techniques for silver‐based gas diffusion electrodes used for the electrochemical reduction of carbon dioxide (eCO2R) are systematically reviewed and compared with respect to their scalability. In addition, physics‐based and data‐driven modeling approaches are discussed, and a perspective is given on how modeling can aid ...
Simon Emken +6 more
wiley +1 more source
Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy +9 more
wiley +1 more source
Analysis on hybrid memory architecture for big data application
Due to the limited scalability of DRAM,it is hard to optimize the performance of big data analysis and the big data applications.The new non-volatile memory (NVM) brings the opportunity to improve the performance and efficiency for big data applications ...
Xin LI, Xuan CHEN, Zhiqiu HUANG
doaj
Magnetoelectric memory function with optical readout
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of electrical ...
Bordács, Sándor +10 more
core +1 more source
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske +4 more
wiley +1 more source
Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa +6 more
wiley +1 more source
The energy efficiency of 8-bit low-power microcontrollers [PDF]
We have measured the energy cost of processing, sleeping, non-volatile memory writes and ADC measurements of six 8-bit microprocessors from three manufacturers.
Jones, Mark Hedley, Scott, Jonathan B.
core +1 more source
Nanowire Volatile RAM as an Alternative to SRAM
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control
Khasanvis, Santosh +2 more
core +1 more source

