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2010 IEEE International Memory Workshop, 2010
STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tunnel junction (MTJ) storage element (Figure 1).
A. Driskill-Smith +9 more
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STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tunnel junction (MTJ) storage element (Figure 1).
A. Driskill-Smith +9 more
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28nm advanced CMOS resistive RAM solution as embedded non-volatile memory
2014 IEEE International Reliability Physics Symposium, 2014A back-end integrated Resistive Random Access Memory (ReRAM) (TiN/HfO 2 /Ti/TiN) in advanced 28nm CMOS process is evaluated. Significant operating margins and high performances identified at device level (read margin, low power set/reset, endurance and retention) are demonstrated to be significantly reduced on larger statistics, i.e.
Benoist, Antoine +12 more
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High density 5 Volt-only compatible non-volatile RAM cell
1982 International Electron Devices Meeting, 1982A high density, non-volatile RAM cell composed of a volatile RAM component, merged with a non-volatile element which "shadows" the RAM component, is described. Unlike earlier low density Shadow RAM approaches, small cell size is achieved here by utilizing a vertically integrated 1T-1C DRAM element merged with a highly compact, vertically integrated ...
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MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET
ACM Transactions on Design Automation of Electronic Systems, 2022Peter Dowben +2 more
exaly
Design and Analysis of Radiation Hardened by Design Non-Volatile RAM for Space Applications
International Journal of Scientific and Research Publications, 2023Greeshma N, Jamuna S
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Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices
IEEE Electron Device Letters, 2022Spyros Stathopoulos +2 more
exaly
Exploration of trade-offs in the design of volatile STT–RAM cache
Journal of Systems Architecture, 2016Kiyoung Choi, Namhyung Kim
exaly
nvramdisk: A Transactional Block Device Driver for Non-Volatile RAM.
IEEE Trans. Computers, 2016Jaemin Jung, Youjip Won
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A Novel L1 Cache Based on Volatile STT-RAM
Communications in Computer and Information Science, 2016Zhang Minxuan
exaly