Results 201 to 210 of about 163,724 (263)

Evaluation of Recent Technologies of Nonvolatile RAM

IEEE Transactions on Nuclear Science, 2007
Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, V. Pouget, F. Darracq, J. P. David, S. Soonckindt   +7 more
openaire   +2 more sources

MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET

ACM Transactions on Design Automation of Electronic Systems, 2021
Magneto-Electric FET ( MEFET ) is a recently developed post-CMOS FET, which offers intriguing characteristics for high-speed and low-power design in both logic and memory applications. In this article, we present MeF-RAM , a non-volatile cache memory design based on 2 ...
Shaahin Angizi, Navid Khoshavi, Andrew Marshall, Peter Dowben, Deliang Fan   +4 more
openaire   +2 more sources

Testing SBT Ferroelectric Thin Films for Non-Volatile RAM

Integrated Ferroelectrics, 2004
A combined method for testing a sol-gel derived strontium bismuth tantalate (SBT) film for non-volatile ferroelectric RAM memories (NVFERAM) that combine fatigue and retention measurements is compared with the conventional one. It results more alike to how a memory cell works in a RAM.
P. RAMOS, R. JIMÉNEZ, C. ALEMANY, M. L. CALZADA, A. GONZÁLEZ, C. E. ALONSO, J. MENDIOLA   +6 more
openaire   +2 more sources

An endurance-free ferroelectric random access memory as a non-volatile RAM

2008 Symposium on VLSI Technology, 2008
We demonstrate endurance characteristics of a 1T1C, 64 Mb FRAM in a real-time operational situation. To explore endurance properties in address access time tAA of 100 ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to D1- and D0-READ/RESTORE/WRITE over a frequency range from 1.0 to 7.7 MHz. What has been achieved
D. J. Jung, W. S. Ahn, Y. K. Hong, H. H. Kim, Y. M. Kang, J. Y. Kang, E. S. Lee, H. K. Ko, S. Y. Kim, W. W. Jung, J. H. Kim, S.K. Kang, J. Y. Jung, H. S. Kim, D. Y. Choi, S. Y. Lee, K. H. A. Wei, C. Wei, H. S. Jeong   +18 more
openaire   +2 more sources

Building fully functional instant on/off systems by making use of non-volatile RAM

2011 IEEE International Conference on Consumer Electronics (ICCE), 2011
In this paper we present our experience in building a fully functional computer system that can be turned on and off instantly to zero or minimal power state. This feature is not possible with current (embedded) computer systems such as cellular phones or smartphones that are based on full fledged operating systems, as booting such a system takes a ...
Hyojeen Kim, Eunsam Kim, Jongmoo Choi, Donghee Lee, Sam H. Noh   +4 more
openaire   +2 more sources

Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation

IEEE Transactions on Circuits and Systems II: Express Briefs, 2023
Recently, many computing-in-memory (CIM) systems based on non-volatile devices have been implemented well. However, they perform poorly in high bit-width processes due to device access latency and energy cost. In this brief, we present an in memory fully
Ximing Li, Xing Jin, Weichong Chen, Ningyuan Yin, Zhiyi Yu   +4 more
openaire   +2 more sources

ENDURA : Enhancing Durability of Multi Level Cell STT-RAM based Non Volatile Memory Last Level Caches

2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC), 2022
With high packing density and low leakage power, Spin Transfer Torque Random Access Memories (STT-RAM) are a promising alternative to replace traditional memory technologies such as SRAM and DRAM.
Yogesh Kumar, S. Sivakumar, John Jose
openaire   +2 more sources

Using Non-Volatile RAM as a Write Buffer for NAND Flash Memory-based Storage Devices

2008 IEEE International Symposium on Modeling, Analysis and Simulation of Computers and Telecommunication Systems, 2008
Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems.
Sungmin Park, Hoyoung Jung, Hyoki Shim, Sooyong Kang, Jaehyuk Cha   +4 more
openaire   +2 more sources

Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM

2017 IEEE International Electron Devices Meeting (IEDM), 2017
We establish an active electrode (AE) selection criterion for volatile and non-volatile switching in metallic conducting bridge (CB) RAM, relevant to cross-point selector and memory applications. Using first principle calculations, we show that: (a) volatile versus non-volatile switching is determined by the energy difference A between the cluster ...
Nikhil Shukla, Ram Krishna Ghosh, Benjamin Grisafe, Suman Datta   +3 more
openaire   +2 more sources

Design and Implementation of a Non-volatile RAM Disk in the SAN Environment

GCC Workshops, 2004
The mechanical nature of the magnetic disks limits the possibility of significant improvement of the I/O performance of the magnetic disk storage systems currently in use. The use of magnetic disk storage system has become an obstacle to the performance development of critical applications.
Ji-wu Shu, Bing Yu, Rui Yan
openaire   +2 more sources