Results 211 to 220 of about 10,864,876 (268)

Low-Power Non-Volatile Spintronic Memory: STT-RAM and Beyond

Journal Physics D: Applied Physics, 2013
The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory.
K L Wang, P Khalili Amiri
exaly   +2 more sources

Fundamental Mechanism Behind Volatile and Non-Volatile Switching in Metallic Conducting Bridge RAM

2017 IEEE International Electron Devices Meeting (IEDM), 2017
We establish an active electrode (AE) selection criterion for volatile and non-volatile switching in metallic conducting bridge (CB) RAM, relevant to cross-point selector and memory applications. Using first principle calculations, we show that: (a) volatile versus non-volatile switching is determined by the energy difference A between the cluster ...
Suman Datta, Benjamin Grisafe, Nikhil Shukla   +2 more
exaly   +2 more sources

Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices

IEEE Electron Device Letters, 2022
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile.
Spyros Stathopoulos, Christos Giotis, Themis Prodromakis   +2 more
exaly   +2 more sources

World-Most Energy-Efficient MRAM Technology for Non-Volatile RAM Applications

2022 International Electron Devices Meeting (IEDM), 2022
S H Hwang, Y J Song, D -E Jeong
exaly   +2 more sources

Non-volatile spin-transfer torque RAM (STT-RAM)

68th Device Research Conference, 2010
Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance.
E. Chen, D. Lottis, A. Driskill-Smith, D. Druist, V. Nikitin, S. Watts, X. Tang, D. Apalkov   +7 more
openaire   +1 more source

MRAMFS: a compressing file system for non-volatile RAM

The IEEE Computer Society's 12th Annual International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunications Systems, 2004. (MASCOTS 2004). Proceedings., 2004
File systems using non-volatile RAM (NVRAM) promise great improvements in file system performance over conventional disk storage. However, current technology allows for a relatively small amount of NVRAM, limiting the effectiveness of such an approach.
Nathan K. Edel, Deepa Tuteja, Ethan L. Miller, Scott A. Brandt   +3 more
openaire   +1 more source

The prospects of non-volatile phase-change RAM

Microsystem Technologies, 2006
Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current.
Kinam Kim, Gitae Jeong
openaire   +1 more source

MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET

ACM Transactions on Design Automation of Electronic Systems, 2021
Magneto-Electric FET ( MEFET ) is a recently developed post-CMOS FET, which offers intriguing characteristics for high-speed and low-power design in both logic and memory applications. In this article, we present MeF-RAM , a non-volatile cache memory design based on 2 ...
Shaahin Angizi, Navid Khoshavi, Andrew Marshall, Peter Dowben, Deliang Fan   +4 more
openaire   +2 more sources

Evaluation of Recent Technologies of Nonvolatile RAM

IEEE Transactions on Nuclear Science, 2007
Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Nuns, T., Duzellier, S., Bertrand, J., Hubert, G., Pouget, V., Darracq, Frédéric, David, J.P, Soonckindt, S.   +7 more
openaire   +1 more source

Relaxing non-volatility for fast and energy-efficient STT-RAM caches

2011 IEEE 17th International Symposium on High Performance Computer Architecture, 2011
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology that is a potential universal memory that could replace SRAM in processor caches. This paper presents a novel approach for redesigning STT-RAM memory cells to reduce the high dynamic energy and slow write latencies.
Clinton Wills Smullen IV, Vidyabhushan Mohan, Anurag Nigam, Sudhanva Gurumurthi, Mircea R. Stan   +4 more
openaire   +2 more sources