Results 231 to 240 of about 12,905 (282)
Some of the next articles are maybe not open access.
Testing SBT Ferroelectric Thin Films for Non-Volatile RAM
Integrated Ferroelectrics, 2004A combined method for testing a sol-gel derived strontium bismuth tantalate (SBT) film for non-volatile ferroelectric RAM memories (NVFERAM) that combine fatigue and retention measurements is compared with the conventional one. It results more alike to how a memory cell works in a RAM.
P Ramos, R Jiménez, C Alemany
exaly +2 more sources
Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016 Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment.
G. Molas +17 more
openaire +2 more sources
Low-power non-volatile spintronic memory: STT-RAM and beyond
Journal Physics D: Applied Physics, 2013The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory.
K L Wang +2 more
exaly +2 more sources
Using Non-Volatile RAM as a Write Buffer for NAND Flash Memory-based Storage Devices
2008 IEEE International Symposium on Modeling, Analysis and Simulation of Computers and Telecommunication Systems, 2008Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems.
Sooyong Kang, Jaehyuk Cha
exaly +2 more sources
Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM
2017 IEEE International Electron Devices Meeting (IEDM), 2017We establish an active electrode (AE) selection criterion for volatile and non-volatile switching in metallic conducting bridge (CB) RAM, relevant to cross-point selector and memory applications. Using first principle calculations, we show that: (a) volatile versus non-volatile switching is determined by the energy difference A between the cluster ...
Nikhil Shukla +2 more
exaly +2 more sources
A Microcomputer Chip With Non-Volatile Shadow Ram for Consumer Applications
IEEE Transactions on Consumer Electronics, 1986Using a double cell approach combining static and non-volatile memory, a dedicated microcomputer chip includes a memory which operates at the full micro speed, yet can retain data even when the power supply has been removed. Applications of the device include electronicect- onic tuning systems, analog value settings, white goods, smart telephones ...
exaly +2 more sources
Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices
IEEE Electron Device Letters, 2022 Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile.
Christos Giotis +2 more
exaly +2 more sources
World-most energy-efficient MRAM technology for non-volatile RAM applications
2022 International Electron Devices Meeting (IEDM), 2022S H Hwang, Y J Song
exaly +2 more sources
2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC), 2022
Yogesh Kumar, S Sivakumar, John JOSÉ
exaly +2 more sources
Yogesh Kumar, S Sivakumar, John JOSÉ
exaly +2 more sources
Non-volatile spin-transfer torque RAM (STT-RAM)
68th Device Research Conference, 2010Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance.
E. Chen +7 more
openaire +1 more source