Results 241 to 250 of about 12,905 (282)
Some of the next articles are maybe not open access.
MRAMFS: a compressing file system for non-volatile RAM
The IEEE Computer Society's 12th Annual International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunications Systems, 2004. (MASCOTS 2004). Proceedings., 2004File systems using non-volatile RAM (NVRAM) promise great improvements in file system performance over conventional disk storage. However, current technology allows for a relatively small amount of NVRAM, limiting the effectiveness of such an approach.
Nathan K. Edel +3 more
openaire +1 more source
MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET
ACM Transactions on Design Automation of Electronic Systems, 2021Magneto-Electric FET ( MEFET ) is a recently developed post-CMOS FET, which offers intriguing characteristics for high-speed and low-power design in both logic and memory applications. In this article, we present MeF-RAM , a non-volatile cache memory design based on 2 ...
Shaahin Angizi +4 more
openaire +1 more source
The prospects of non-volatile phase-change RAM
Microsystem Technologies, 2006Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current.
Kinam Kim, Gitae Jeong
openaire +1 more source
Evaluation of Recent Technologies of Nonvolatile RAM
IEEE Transactions on Nuclear Science, 2007Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
T. Nuns +7 more
openaire +1 more source
Relaxing non-volatility for fast and energy-efficient STT-RAM caches
2011 IEEE 17th International Symposium on High Performance Computer Architecture, 2011Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology that is a potential universal memory that could replace SRAM in processor caches. This paper presents a novel approach for redesigning STT-RAM memory cells to reduce the high dynamic energy and slow write latencies.
Clinton Wills Smullen IV +4 more
openaire +1 more source
An endurance-free ferroelectric random access memory as a non-volatile RAM
2008 Symposium on VLSI Technology, 2008We demonstrate endurance characteristics of a 1T1C, 64 Mb FRAM in a real-time operational situation. To explore endurance properties in address access time tAA of 100 ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to D1- and D0-READ/RESTORE/WRITE over a frequency range from 1.0 to 7.7 MHz. What has been achieved
D. J. Jung +18 more
openaire +1 more source
Design and Implementation of a Non-volatile RAM Disk in the SAN Environment
2004The mechanical nature of the magnetic disks limits the possibility of significant improvement of the I/O performance of the magnetic disk storage systems currently in use. The use of magnetic disk storage system has become an obstacle to the performance development of critical applications.
Jiwu Shu, Bing Yu, Rui Yan
openaire +1 more source
2010 Symposium on VLSI Technology, 2010
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000
A. Driskill-Smith +9 more
openaire +1 more source
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000
A. Driskill-Smith +9 more
openaire +1 more source
A Non-Volatile Buffered Main Memory Using Phase-Change RAM
2012The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM.
Do-Heon Lee +2 more
openaire +1 more source
2010 IEEE International Memory Workshop, 2010
STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tunnel junction (MTJ) storage element (Figure 1).
A. Driskill-Smith +9 more
openaire +1 more source
STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tunnel junction (MTJ) storage element (Figure 1).
A. Driskill-Smith +9 more
openaire +1 more source