Results 251 to 260 of about 12,905 (282)

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

2014 IEEE International Reliability Physics Symposium, 2014
A back-end integrated Resistive Random Access Memory (ReRAM) (TiN/HfO 2 /Ti/TiN) in advanced 28nm CMOS process is evaluated. Significant operating margins and high performances identified at device level (read margin, low power set/reset, endurance and retention) are demonstrated to be significantly reduced on larger statistics, i.e.
Benoist, Antoine, Blonkowski, S., Jeannot, S., Denorme, S., Damiens, J., Berger, J., Candelier, P., Vianello, E., Grampeix, H., Nodin, J., Jalaguier, E., Perniola, L., Allard, Bruno   +12 more
openaire   +1 more source

A Hybrid Memory Hierarchy to Improve Cache Reliability with Non-volatile STT-RAM

2017
With the development of manufacturing technology, chips have more integration density. However, soft errors have become a sensitive concern in the design of computer systems. So, in this paper, it aims to find the potential vulnerable data and allocates it into a reliable Non-Volatile Memory (NVM) with the assistance of complier on a hybrid memory ...
Naikuo Chen, Zhilou Yu, Ruidong Zhao
openaire   +1 more source

A new MOD method to prepare Sr0.7Bi2.2Ta2O9 ferroelectric films for non-volatile RAM memories

Microelectronics Reliability, 2000
Abstract Strontium bismuth tantalate, Sr0.7Bi2.2Ta2O9 (SBT), thin films were prepared by a new metalorganic decomposition (MOD) method using strontium (2,2,6,6-tetramethyl-3,5-heptanedionate), bismuth (2,2,6,6-tetramethyl-3,5-heptanedionate), and tantalum ethoxide as the metalorganic precursors.
P Tejedor, A.B Fernández, R Jiménez, C Alemany, J Mendiola   +4 more
openaire   +1 more source

Building fully functional instant on/off systems by making use of non-volatile RAM

2011 IEEE International Conference on Consumer Electronics (ICCE), 2011
In this paper we present our experience in building a fully functional computer system that can be turned on and off instantly to zero or minimal power state. This feature is not possible with current (embedded) computer systems such as cellular phones or smartphones that are based on full fledged operating systems, as booting such a system takes a ...
Hyojeen Kim, Eunsam Kim, Jongmoo Choi, Donghee Lee, Sam H. Noh   +4 more
openaire   +1 more source

An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

2016 IEEE 8th International Memory Workshop (IMW), 2016
Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.
Nathan Gonzales, John Dinh, Derric Lewis, Nad Gilbert, Bard Pedersen, Deepak Kamalanathan, John R. Jameson, Shane Hollmer   +7 more
openaire   +1 more source

Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2006
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects,
M. Kund, G. Beitel, C.-U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K. Ufert, G. Muller   +7 more
openaire   +1 more source

High density 5 Volt-only compatible non-volatile RAM cell

1982 International Electron Devices Meeting, 1982
A high density, non-volatile RAM cell composed of a volatile RAM component, merged with a non-volatile element which "shadows" the RAM component, is described. Unlike earlier low density Shadow RAM approaches, small cell size is achieved here by utilizing a vertically integrated 1T-1C DRAM element merged with a highly compact, vertically integrated ...
openaire   +1 more source

A novel design for low power Re-RAM based non-volatile flip flop using content addressable memory

2017 Third International Conference on Science Technology Engineering & Management (ICONSTEM), 2017
Low power consumption is the major issue in electronic systems and memories are the major contributors of the power consumption. Resistive Memories (ReRAMs) has fast access time, ultra-low stand by power and high reliability. Memristor based NV logics like resistive SRAM and resistive CAM memories were proposed and focused on the behavior of resistive ...
B. Hemavathy, V. Meenakshi
openaire   +1 more source

High Speed Unipolar Switching with Very Low Reset Current Resistance RAM (RRAM) for Non-Volatile Memory Application

ECS Meeting Abstracts, 2008
Abstract not Available.
Seung-eon Ahn, Myoung-Jae Lee, Bo Soo Kang, Ki Hwan Kim, Chang Bum Lee, Yongsoo Park, Genrikh Stefanovich   +6 more
openaire   +1 more source

MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET

ACM Transactions on Design Automation of Electronic Systems, 2022
Shaahin Angizi, Navid Khoshavi
exaly