Results 211 to 220 of about 163,724 (263)

A new MOD method to prepare Sr0.7Bi2.2Ta2O9 ferroelectric films for non-volatile RAM memories

Microelectronics Reliability, 2000
Abstract Strontium bismuth tantalate, Sr0.7Bi2.2Ta2O9 (SBT), thin films were prepared by a new metalorganic decomposition (MOD) method using strontium (2,2,6,6-tetramethyl-3,5-heptanedionate), bismuth (2,2,6,6-tetramethyl-3,5-heptanedionate), and tantalum ethoxide as the metalorganic precursors.
P Tejedor, A.B Fernández, R Jiménez, C Alemany, J Mendiola   +4 more
openaire   +2 more sources

14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
We present a 14nm FinFET embedded MRAM (eMRAM) technology for non-volatile RAM (nvRAM) applications, featuring endurance of 1E12 cycles, 100ns write speed, 150°C retention for 10 years, and macro density of 18Mb/mm2.
Joosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, DongKyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, Kwangseok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae-Young Lee, Kyung-Tae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku   +29 more
openaire   +2 more sources

Low power multi-context look-up table (LUT) using spin-torque transfer magnetic RAM for non-volatile FPGA

2017 International SoC Design Conference (ISOCC), 2017
The conventional magnetic RAM (MRAM) LUTs for non-volatile field programmable gate arrays (FPGA) have excellent overall power characteristics for read and static modes but sufficient reliability of data operation has not been met due to the large process variations in the cell process technology.
Kyungseon Cho, Seungjin Lee, Choongkeun Lee, Taegun Yim, Hongil Yoon   +4 more
openaire   +2 more sources

TridentFS: a hybrid file system for non-volatile RAM, flash memory and magnetic disk

Software: Practice and Experience, 2014
Ting-Chang Huang, Da-Wei Chang
openaire   +2 more sources

<monospace>nvramdisk</monospace>: A Transactional Block Device Driver for Non-Volatile RAM

IEEE Transactions on Computers, 2016
Jaemin Jung, Youjip Won
openaire   +2 more sources

Non-volatile spin-transfer torque RAM (STT-RAM)

68th Device Research Conference, 2010
Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance.
E. Chen, D. Lottis, A. Driskill-Smith, D. Druist, V. Nikitin, S. Watts, X. Tang, D. Apalkov   +7 more
openaire   +1 more source

The prospects of non-volatile phase-change RAM

Microsystem Technologies, 2006
Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current.
Kinam Kim, Gitae Jeong
openaire   +1 more source

Low-power non-volatile spintronic memory: STT-RAM and beyond

Journal of Physics D: Applied Physics, 2013
The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory.
K L Wang, J G Alzate, P Khalili Amiri
openaire   +1 more source

Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy

International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2023
Emerging non-volatile memories (NVM) are alternatives to the conventional charge storage-based memories such as Flash, static random-access memory (SRAM) and dynamic random-access memory (DRAM).
J. Tay, J. Cheah, S. Chef, X. Zeng, Q. Liu, C. Gan   +5 more
semanticscholar   +1 more source

Lifetime Improvement of Non Volatile Memory Cache by Write Restriction

2023 IEEE 8th International Conference for Convergence in Technology (I2CT), 2023
Non-volatile memory technologies are the future contenders for the design of caches in the memory hierarchy because of their appealing characteristics such as high density and low static power.
Pavitra Y J, Jamuna S, Manikandan J, Nikhil Chandra Reddy N   +3 more
semanticscholar   +1 more source