Results 211 to 220 of about 46,832 (274)
Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop
identifier:oai:t2r2.star.titech.ac.jp ...
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Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]
Katehi L +5 more
europepmc +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Magneto-thermal switching using superconducting metals and alloys. [PDF]
Arima H +3 more
europepmc +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Digital composites with reprogrammable phase architectures. [PDF]
Bai Y +5 more
europepmc +1 more source
This work demonstrates bistable graphene doping of about 5 × 1012 cm−2$\rm{c{m}^{-2}}$ using a molecularly thin electrolyte confined between two, 2D crystals. The electrolyte's bistability enables multiple non‐volatile states with a conductive AFM tip writing, erasing, and sensing these states.
Huiran Wang +3 more
wiley +1 more source
Differential Non-Volatile Metabolomics in High- and Low-Alcohol Strong-Flavor Baijiu by Non-Targeted Approach. [PDF]
Fan Y +9 more
europepmc +1 more source
Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride
Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang +22 more
wiley +1 more source
Prediction of relevant exposure sources to aggregate chemical exposures from general and occupational environments: exploration of a decision tree approach. [PDF]
Chettou H +6 more
europepmc +1 more source

