Results 211 to 220 of about 46,832 (274)

Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop

open access: yesNonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]

open access: yesACS Omega
Katehi L   +5 more
europepmc   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

open access: yesSmall, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li   +13 more
wiley   +1 more source

Magneto-thermal switching using superconducting metals and alloys. [PDF]

open access: yesSci Technol Adv Mater
Arima H   +3 more
europepmc   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

open access: yesSmall, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong   +9 more
wiley   +1 more source

Direct Write, Read, and Erase of a Vertical Heterostructure of Graphene–Monolayer Electrolyte–h‐BN Using Electric Force Microscopy

open access: yesSmall, EarlyView.
This work demonstrates bistable graphene doping of about 5 × 1012 cm−2$\rm{c{m}^{-2}}$ using a molecularly thin electrolyte confined between two, 2D crystals. The electrolyte's bistability enables multiple non‐volatile states with a conductive AFM tip writing, erasing, and sensing these states.
Huiran Wang   +3 more
wiley   +1 more source

Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride

open access: yesSmall, EarlyView.
Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang   +22 more
wiley   +1 more source

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