Results 261 to 270 of about 20,887 (309)
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Journal of Agricultural and Food Chemistry, 2005
This study is the first of two publications that investigate the phenomena of coffee nonvolatiles interacting with coffee volatile compounds. The purpose was to identify which coffee nonvolatile(s) are responsible for the interactions observed between nonvolatile coffee brew constituents and thiols, sulfides, pyrroles, and diketones.
Marielle, Charles-Bernard +3 more
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This study is the first of two publications that investigate the phenomena of coffee nonvolatiles interacting with coffee volatile compounds. The purpose was to identify which coffee nonvolatile(s) are responsible for the interactions observed between nonvolatile coffee brew constituents and thiols, sulfides, pyrroles, and diketones.
Marielle, Charles-Bernard +3 more
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Nonvolatile semiconductor memory
Microprocessing and Microprogramming, 1982Abstract The realization of nonvolatile semiconductor memory products has lead to an evolution of denser and more powerful devices. The semiconductor technology utilized affect the device characteristics such as size, power, and speed. The technology also determines what physical mechanisms are used in the detailed memory cells.
Raphael Klein, Wallace E. Tchon
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Journal of Food Science, 1974
ABSTRACTS The nonvolatile acids were extracted from lychee, separated by TLC and identified as levulinic, malic and citric. GLC of the methyl esters of the acids confirmed the presence of levulinic, malic and citric acids and revealed traces of lactic, malonic, fumaric and succinic acids.
HARVEY T. CHAN, SIMON C. M. KWOK
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ABSTRACTS The nonvolatile acids were extracted from lychee, separated by TLC and identified as levulinic, malic and citric. GLC of the methyl esters of the acids confirmed the presence of levulinic, malic and citric acids and revealed traces of lactic, malonic, fumaric and succinic acids.
HARVEY T. CHAN, SIMON C. M. KWOK
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Ferroelectrics for nonvolatile RAMs
IEEE Spectrum, 1989The structure and operation of ferroelectric thin-film memory capacitors for use in nonvolatile random-access memory applications are described. The search for the ideal ferroelectric material for ferro-electronic memory applications is examined. Possible military and nonmilitary applications of these memories are noted. >
D.W. Bondurant, F.P. Gnadinger
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Ferroelectric nonvolatile logic
Integrated Ferroelectrics, 2001Abstract This paper describes the design of nonvolatile logic elements using ferroelectric materials. Two separate approaches are discussed. The first approach involves shadowing a CMOS latch or flip-flop with a single bit 2T/2C ferroelectric memory. The second approach offers improved density by integrating ferroelectric capacitors within the logic ...
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2014
Memory design is commonly composed of two parts: the data arrays and the peripheral circuits. The data array is essentially a two-dimensional expansion of memory cells repetitively, which determines the way to retrieve data from particular cells in the array with limited I/O interface.
Hao Yu, Yuhao Wang
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Memory design is commonly composed of two parts: the data arrays and the peripheral circuits. The data array is essentially a two-dimensional expansion of memory cells repetitively, which determines the way to retrieve data from particular cells in the array with limited I/O interface.
Hao Yu, Yuhao Wang
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2017
Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
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Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
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A concept for nonvolatile memories
Applied Physics Letters, 1997A concept for nonvolatile memories is proposed in which a unique combination of a Schottky junction with tunable barrier height and an adjacent electron potential well is used. A proof-of-concept demonstration is given for such a class of memory devices using ZnCdMgSe/InP heterostructures.
Kai Shum +4 more
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2006 International Electron Devices Meeting, 2006
A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated.
Wei Wang +7 more
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A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated.
Wei Wang +7 more
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ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549), 2002
The embedded nonvolatile memories (NVM) offer in-system reprogrammability along with low power, noise reduction. more reliable, and reduced system cost while maintain high speed, high density system performance over other NVM including stand-alone flash memory. The extent of market opportunity is driven by product cost.
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The embedded nonvolatile memories (NVM) offer in-system reprogrammability along with low power, noise reduction. more reliable, and reduced system cost while maintain high speed, high density system performance over other NVM including stand-alone flash memory. The extent of market opportunity is driven by product cost.
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