Results 221 to 230 of about 280,489 (305)

Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
We demonstrate the realization of a novel ferroelectric‐like two‐dimensional electron gas (2DEG) based on the epitaxial interface between SrO‐terminate SrTiO3 and ferroeletric KNb0.5Na0.5O3${\rm KNb}_{0.5}{\rm Na}_{0.5}{\rm O}_3$ thin films. We show nonvolatile control of the transport properties enabling spatially reconfigurable devices in which ...
Martando Rath, Yu Chen, Daniela Stornaiuolo, Aravind Raji, Alexandre Gloter, Antonio Cassinese, Andrea Rubano, Alessia Sambri, Domenico Paparo, Emiliano Di Gennaro, Jérôme Lecourt, Wilfrid Prellier, Francesco Rosa, Nicholas B. Brookes, Giacomo Ghiringhelli, Daniele Preziosi, Marco Salluzzo   +16 more
wiley   +1 more source

Memristive Behavior in Carrier Accumulation-Based Optical Modulators. [PDF]

Nano Lett
Korneluk A, Brańko K, Stefaniuk T.
europepmc   +1 more source

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

Quantum-Material Josephson Junctions: Unconventional Barriers, Emerging Functionality. [PDF]

Nano Lett
Pitton KA, Dubbelman MP, Kyrk TM, Mrabet Haje HE, Tang Y, van der Kolk RJH, Blanter YM, Ali MN.   +7 more
europepmc   +1 more source

High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements. [PDF]

Nanomaterials (Basel)
Jin L, Xu W, Qian Y, Ji T, Wu K, Huang L, Chen F, Huang N, Xing S, Shao Z, Li W, Liu Y, Xie L.   +12 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

11-bit two-dimensional floating-gate memories. [PDF]

Nat Commun
Wang Y, Cai Y, Wang F, Yan T, Li S, Cao M, Hong R, Zhai B, Xu K, Zhan X, He J, Wang Z.   +11 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source