An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures. [PDF]
Han Y +9 more
europepmc +1 more source
Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors
The indium gallium zinc oxide (IGZO) surface is modified with Ar‐plasma and ultraviolet ozone (UV‐O3) treatment. The W/IGZO/Pt memristors with Ar‐plasma treatment show forming‐free abrupt switching, whereas the UV‐O3‐treated device exhibits gradual switching, while both operate at voltages ≤1 V.
Krishna Rudrapal +5 more
wiley +1 more source
Achieving high precision in analog in-memory computing systems. [PDF]
Mannocci P +3 more
europepmc +1 more source
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley +1 more source
Interfacial Engineering of Two-Dimensional Perovskite Memristors toward Reliable and Flexible Optoelectronic Memory Arrays. [PDF]
Bousoulas P +11 more
europepmc +1 more source
Nonvolatile silicon photonic MEMS switches enabled by van der Waals force. [PDF]
Hu Y +9 more
europepmc +1 more source
Neuromorphic Floating-Gate Memory Based on 2D Materials. [PDF]
Hu C +9 more
europepmc +1 more source
Trap-Controlled Conduction and Metal-Insulator Transition in Superconducting Cuprate Memristors. [PDF]
Günkel T +5 more
europepmc +1 more source
Polarization-Enabled Piezoelectric Tellurium-Selenium (Te<sub>x</sub>Se<sub>1-</sub> <sub>x</sub>) Thin Films for Memory Switching and Artificial Synaptic Functions. [PDF]
Chung CC +16 more
europepmc +1 more source
Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Hwang H, Youn S, Kim H.
europepmc +1 more source

