Results 131 to 140 of about 1,751,371 (167)

High-density via RRAM cell with multi-level setting by current compliance circuits. [PDF]

Discov Nano
Hsieh YC, Lin YC, Huang YH, Chih YD, Chang J, Lin CJ, King YC.   +6 more
europepmc   +1 more source

Polymer-Based Linear and Symmetric Artificial Synaptic Memristors for Accurate and Reliable Neuromorphic Computing Applications. [PDF]

Nanomaterials (Basel)
Kumar A, Tseng TY.
europepmc   +1 more source

A plasmon-electron addressable and CMOS compatible random access memory. [PDF]

Sci Adv
Greig SR, Firby CJ, Muneshwar T, Alagöz S, Hopmann E, Carnio BN, Zhang M, Ciarniello G, Cadien K, Elezzabi AY.   +9 more
europepmc   +1 more source

What is next for LLMs? Pushing the boundaries of next-gen AI computing hardware with photonic chips. [PDF]

Nanophotonics
Li R, Xin Q, Wei W, Mao S, Ma E, Chen Z, Gao J, Zhang M, Li H, Zhang Z.   +9 more
europepmc   +1 more source

Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. [PDF]

Adv Mater
Chen C, Zhou Y, Tong L, Pang Y, Xu J.
europepmc   +1 more source

Ferroelectric compute-in-memory annealer for combinatorial optimization problems. [PDF]

Nat Commun
Yin X, Qian Y, Vardar A, Günther M, Müller F, Laleni N, Zhao Z, Jiang Z, Shi Z, Shi Y, Gong X, Zhuo C, Kämpfe T, Ni K.   +13 more
europepmc   +1 more source

Electron-Sponge Nature of Polyoxometalates for Next-Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices. [PDF]

Adv Sci (Weinh)
Ahmad W, Ahmad N, Wang K, Aftab S, Hou Y, Wan Z, Yan BB, Pan Z, Gao HL, Peung C, Junke Y, Liang C, Lu Z, Yan W, Ling M.   +14 more
europepmc   +1 more source

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In₂Se₃ on fluor-phlogopite. [PDF]

Nat Commun
Si K, Zhao Y, Zhang P, Wang X, He Q, Wei J, Li B, Wang Y, Cao A, Hu Z, Tang P, Ding F, Gong Y.   +12 more
europepmc   +1 more source

Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device

IEEE Electron Device Letters, 2012
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data ...
Tae Hyoung Kim, Ramesh Vaddi
exaly   +2 more sources