Results 141 to 150 of about 1,751,371 (167)
Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices
IEEE Transactions on Circuits and Systems I: Regular Papers, 2012 Hybrid integration of CMOS and nonvolatile memory (NVM) devices has become the foundation for emerging nonvolatile memory-based computing. The primary challenge to validate hybrid memory system with both CMOS and NVM devices is to develop a SPICE-like ...
Yu Hao, Fei Wei
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2015 Nonvolatile memory (NVM) has many benefits compared to the traditional static RAM, such as improved reliability and reduced power consumption, but it has long write latency and limited write endurance. Scratchpad memory (SPM) is software-managed small on-
Zili Shao, Min Yao, Zonghua Gu
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Design Optimization of Pulsed-Mode Electromechanical Nonvolatile Memory
IEEE Electron Device Letters, 2012 Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C).
Tae Hyoung Kim, Ramesh Vaddi
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Nonvolatile Memory (NVM) for AI and Neuromorphic Computing
Journal of Electronic Materialsexaly +2 more sources
Microelectronics and Optoelectronics, 2017
This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from
Jun Kondo +5 more
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This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from
Jun Kondo +5 more
openaire +1 more source
Journal of the Korean Physical Society, 2011
In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system ...
Seongjae Cho +4 more
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In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system ...
Seongjae Cho +4 more
openaire +1 more source
Solid-State Electronics, 2004
Abstract A critical problem of floating gate type nonvolatile memories (FG-NVMs) used in flash memories or EEPROMs is anomalous charge loss which leads to threshold voltage (Vt) shifts on a time scale of months or years at room temperature. The number of these moving bits (MB's) is greatly affected by the nature and properties of the tunnel oxide ...
Jan Ackaert +11 more
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Abstract A critical problem of floating gate type nonvolatile memories (FG-NVMs) used in flash memories or EEPROMs is anomalous charge loss which leads to threshold voltage (Vt) shifts on a time scale of months or years at room temperature. The number of these moving bits (MB's) is greatly affected by the nature and properties of the tunnel oxide ...
Jan Ackaert +11 more
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Emerging nonvolatile memory (NVM) technologies
2015 45th European Solid State Device Research Conference (ESSDERC), 2015Significant progress has been made recently in emerging nonvolatile memories (NVMs). This paper will discuss advantages and challenges of several promising NVM devices, as well as their potential applications. Changing market trends toward mobile, IoT, and data-centric applications create new opportunities for NVMs.
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Journal of nanoscience and nanotechnology
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
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In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
openaire +1 more source