Results 81 to 90 of about 1,751,371 (167)

Hardware-assisted transaction processing : NVM

, 2018
A transaction is a demarcated sequence of application operations, for which the following properties are guaranteed by the underlying transaction processing system (TPS): atomicity, consistency, isolation, and durability (ACID).
Petrov, Ilia, Koch, Andreas, Hardock, Sergej, Riegger, Christian, Ilia Petrov, Sergey Hardock, Tobias Vinçon, Vinçon, Tobias, Andreas Koch, Christian Riegger   +9 more
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Suspended Gate Silicon Nanodots memory

, 2008
This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi, Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige   +3 more
core   +1 more source

A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory

, 2003
A Metal Oxide Nitride Oxide Semiconductor (MONOS) Asymmetric Double Gate (ADG) Nonvolatile Memory (NVM) cell is proposed. In addition to the improved scalability of the NVM cell made possible by the double-gate structure, the 2 conducting channels also ...
Man, Tsz Yin, Yuen, Kam Hung, Chan, Man Sun   +2 more
core  

All-nanocellulose nonvolatile resistive memory [PDF]

Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka, Nogi, Masaya, Jurczak, Malgorzata, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Celano, Umberto, Meng, Gang, He, Yong, Boeck, Jo De, Yanagida, Takeshi   +10 more
core   +1 more source

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

, 2011
A new tunneling model between an inversion layer and the trap sites for the charge-trap-type (CT-) nonvolatile memory (NVM) cell is proposed. By considering the geometrical mismatch between the inversion layer and the trap site of the CT-NVM cell, we
Yasuteru Shigeta, Shintaro Nomura, Masakazu Muraguchi, Yukihiro Takada, Kenji Shiraishi, Yoko Sakurai, Seiichi Miyazaki, Mitsuhisa Ikeda, Tetsuo Endoh, Katsunori Makihara   +9 more
core   +1 more source

Fabrication of Novel GeOx-cladded Ge Quantum Dots and Quantum Dot Gate Nonvolatile Memory using GeOx-Ge Qd\u27s

, 2011
In this dissertation, the floating gate type quantum dot gate nonvolatile memory device has been investigated. The electrical characterization and simulation of the fabricated quantum dot nonvolatile memory (QD-NVM) devices is presented.
Gogna, Mukesh
core   +1 more source

A Study of Self-Aligned SONOS-type Nonvolatile Memory with Internal Block Oxide

, 2013
In this thesis, we have proposed the self-aligned SONOS-type nonvolatile memory with internal block oxide (SAIBO-SONOS NVM). We use the dry etching method to bury oxide materials from the source/drain (S/D) regions with self-aligned technique to form the
Hsu, Shih-wen
core  

Nonvolatile Memory Crossbar Arrays for Non-von Neumann Computing

In the conventional von Neumann (VN) architecture, data—both operands and operations to be performed on those operands—makes its way from memory to a dedicated central processor.
Shelby, Robert M., Boybat, Irem, Narayanan, Pritish, Di Nolfo, Carmelo, Burr, Geoffrey W., Sidler, Severin, Jang, Jun-Woo, Virwani, Kumar, Hwang, Hyunsang   +8 more
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Plate : persistent memory management for nonvolatile main memory

Over the past few years, nonvolatile memory has actively been researched and developed. Therefore, studying operating system (OS) designs predicated on the main memory in the form of a nonvolatile memory and studying methods to manage persistent data in ...
Goto, Masataka, Taniguchi, Hideo, Nagai, Kengo, Yamauchi, Toshihiro, Matono, Tsukasa, Ichikawa, Masaya, Yamamoto, Yuta, Inamoto, Shinji   +7 more
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High-Performance C₆₀ Coupled Ferroelectric Enhanced MoS₂ Nonvolatile Memory

Nonvolatile memory (NVM) devices based on two-dimensional (2D) materials have recently attracted widespread attention due to their high-density integration potential and the ability to be applied in computing-in-memory systems in the post-Moore era ...
Fanqing Zhang (6065486), Zhongyi Li (611140), Lixin Dong (1486483), Jing Zhao (21160), Chunyang Li (611137), Wenfu Zhu (14843518), Lu Li (14069)   +6 more
core   +1 more source