Results 61 to 70 of about 1,751,371 (167)

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, Volume 13, Issue 21, 13 April 2026.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

, 2009
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516), Salvy Russo (18029545), Suk-Ho Choi (1492645), K Belay (19660939), Sung Kim (59072), Min Kim (218786)   +5 more
core  

Securing Emerging Nonvolatile Main Memory with Fast and Energy-Efficient AES In-Memory Implementation

, 2018
As CMOS technology approaches its scaling limit, emerging nonvolatile memory (NVM) technologies become promising alternatives to DRAM due to their low leakage power and better scalability.
Xie, Mimi, Hu, Jingtong, Xie, Yuan, Li, Shuangchen, Glova, Alvin Oliver   +4 more
core   +1 more source

Concurrency implications of nonvolatile byte-addressable memory

, 2018
Thesis (Ph. D.)--University of Rochester. Department Computer Science, 2018.In the near future, storage technology advances are expected to provide nonvolatile byte addressable memory (NVM) for general purpose computing.
Scott, Michael L. (1959 - ), Izraelevitz, Joseph   +1 more
core  

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application

, 2011
In this work, high density and small size metal nanodots (MND) with different work-functions were fabricated as a floating gate of nonvolatile memory (NVM) devices by self-assembled nanodot deposition (SAND).
Toshiya Kojima, Takafumi Fukushima, Tatsuro Hiraki, Yan Li Pei, Tetsu Tanaka, Mitsumasa Koyanagi   +5 more
core   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

, 2015
This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment
Yi-Yun Yang, Yu-Hsien Lin
core   +1 more source

A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure

, 2003
A novel 2-bit/cell nonvolatile memory (NVM) with metal-oxide-nitride-oxide-semiconductor (MONOS) asymmetric double gate (ADG) MOSFET structure is proposed. With the double gate structure, the two conducting channels provide the ability to store 2 bits in
Chan, Mansun, Man, Tsz Yin, Yuen, Kam Hung, Chan, Alain C.K.   +3 more
core   +1 more source

The shuttle nanoelectromechanical nonvolatile memory

, 2012
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling.
Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Chua, Geng Li, Pott, Vincent, Tsai, Julius Ming-Lin   +4 more
core   +1 more source