Results 41 to 50 of about 1,751,371 (167)

A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article introduces a 1FeFET-1Capacitance (1F1C) macro based on a 2-bit ferroelectric field-effect transistor (FeFET) cell operating in the charge domain, marking a significant advancement in nonvolatile memory (NVM) and compute-in-memory (CIM ...
Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang   +4 more
doaj   +1 more source

aCortex: An Energy-Efficient Multipurpose Mixed-Signal Inference Accelerator

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
We introduce “aCortex,” an extremely energy-efficient, fast, compact, and versatile neuromorphic processor architecture suitable for the acceleration of a wide range of neural network inference models.
Mohammad Bavandpour, Mohammad R. Mahmoodi, Dmitri B. Strukov   +2 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Historical perspective and opportunity for computing in memory using floating-gate and resistive non-volatile computing including neuromorphic computing

Neuromorphic Computing and Engineering
The effort addresses the research activity around the usage of non-volatile memories (NVM) for storage of ‘weights’ in neural networks and the resulting computation through these memory crossbars.
Jennifer Hasler, Arindam Basu
doaj   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites

, 2005
A highly scalable 2-bit nonvolatile memory (NVM) cell using two electrically isolated charge trapping sites is proposed and demonstrated by numerical device simulation.
Chan, Mansun, Man, Tsz Yin
core   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Simultaneous Deposition of Different Phase‐Change Alloys Through a Nanopillars Shadow Procedure

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.
A deposition strategy enabling controlled nanoscale stoichiometry modulation in Ge‐Sb‐Te phase‐change materials is presented. Directional elemental fluxes and shadowing effects induced by nanopillar arrays generate distinct Ge‐, Sb‐, and Te‐deficient regions within a single specimen.
Giuseppe D’Arrigo, Mario Scuderi, Giovanni Maida, Sonia Zappalà, Debora Costantino, Antonella Sciuto, Eugenio Zallo, Emanuele Rimini   +7 more
wiley   +1 more source