Results 51 to 60 of about 1,751,371 (167)

Al2O3 Capping and ZrO2 Seed Layer Optimization in Hafnia‐Based Top‐Electrodeless Annealed Ferroelectric Capacitors for Stable Switching Postwake‐Up

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.
Comparison of polarization retention after 109 cycles for HfO2‐based ferroelectrics. The Z0.5–A2R film (red star) exhibits outstanding fatigue endurance despite top‐electrode‐free annealing. Hafnium zirconium oxide (HZO) is a promising material for nonvolatile memories and analog compute‐in‐memory (CIM), offering low power operation and high ...
Patrik Eskelinen, Oscar Kaatranen, Kimmo Rutanen, Jacek Flak, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +5 more
wiley   +1 more source

An Energy-Efficient Digital ReRAM-Crossbar-Based CNN With Bitwise Parallelism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
There is great attention to develop hardware accelerator with better energy efficiency, as well as throughput, than GPUs for convolutional neural network (CNN). The existing solutions have relatively limited parallelism as well as large power consumption
Leibin Ni, Zichuan Liu, Hao Yu, Rajiv V. Joshi   +3 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

One-step fabrication of CdS:Mo–CdMoO₄core–shell nanoribbons for nonvolatile memory devices with high resistance switching

, 2017
A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.
Ni Zheng, Xiaohong Zhang, Xiujuan Zhang, Jiansheng Jie, Zhibin Shao, Xiaofeng Wu, Feifei Xia, Tianhao Jiang   +7 more
core   +1 more source

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang, Rui Su, Wenxi Zhou, Xiaolong Jing, Tonghui Lin, Yifan Yang, Bobo Tian, Xiangshui Miao, Xingsheng Wang   +8 more
wiley   +1 more source

Activation‐Integrated and Memory‐Assisted Dynamic‐Latch Quantizer for Variation‐Tolerant and Low‐Energy Neuromorphic Computing

Advanced Intelligent Systems, Volume 8, Issue 5, May 2026.
A memory‐assisted dynamic‐latch ADC integrating charge‐trap flash enables ultra‐low‐energy quantization and in‐ADC nonlinear activation for variation‐tolerant neuromorphic computing. Analog‐to‐digital converters (ADCs) remain the dominant area/energy bottleneck in neuromorphic computing (NC) systems.
Jonghyun Ko, Jiseong Im, Ryun‐Han Koo, Sung‐Ho Park, Jong‐Ho Lee   +4 more
wiley   +1 more source

NVSim: A circuit-level performance, energy, and area model for emerging nonvolatile memory

, 2012
Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate technologies, spin-torque-transfer memory (STT-RAM, or MRAM), phase-change random-access memory (PCRAM), and resistive random-access ...
Dong, Xiangyu, Xie, Yuan, Jouppi, Norman P., Xu, Cong   +3 more
core   +1 more source

Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

, 2009
This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were ...
Lee, Jong-Won, Shin, Dong Ok, Kim, Sang Ouk, Kim, Bong Hoon, Choi, Yang-Kyu, Ryu, Seong-Wan   +5 more
core   +2 more sources

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Nonvolatile-Memory Characteristics of AlO − -Implanted Al 2 O 3

, 2016
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Kim, Sung, Kim, Min Choul, Belay, Kidane, Elliman, Robert, Russo, Salvy P, Choi, Suk Ho   +5 more
core   +1 more source