Results 21 to 30 of about 1,751,371 (167)
Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers
IEEE Journal of the Electron Devices Society, 2022 This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
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Low‐Voltage Electrochemical LixWO3 Synapses with Temporal Dynamics for Spiking Neural Networks
Advanced Intelligent Systems, 2021 Neuromorphic computing has the great potential to enable faster and more energy‐efficient computing by overcoming the von Neumann bottleneck. However, most emerging nonvolatile memory (NVM)‐based artificial synapses suffer from insufficient precision ...
Qingzhou Wan +8 more
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The Matrix KV Storage System Based on NVM Devices
Micromachines, 2019 The storage device based on Nonvolatile Memory (NVM devices) has high read/write speed and embedded processor. It is a useful way to improve the efficiency of Key-Value (KV) application.
Tao Cai +4 more
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An organic nonvolatile memory using space charge polarization of a gate dielectric [PDF]
, 2009 We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−) as a gate dielectric.
Murata, Hideyuki +3 more
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Partially depleted SONOS FinFET for unified RAM (URAM)-unified function for high-speed 1T DRAM and nonvolatile memory [PDF]
, 2008 —Unified random access memory (URAM) is demon-strated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM).
Kim, Chung-Jin +27 more
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Advanced Intelligent Systems, 2023 Content addressable memory (CAM) is widely used in associative search tasks due to its parallel pattern matching capability. As more complex and data‐intensive tasks emerge, it is becoming increasingly important to enhance CAM density for improved ...
Xunzhao Yin +16 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include ...
Karam Cho, Sumeet Kumar Gupta
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MR-PIPA: An Integrated Multilevel RRAM (HfO
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 This work paves the way to realize a processing-in-pixel (PIP) accelerator based on a multilevel HfOx resistive random access memory (RRAM) as a flexible, energy-efficient, and high-performance solution for real-time and smart image processing at edge ...
Minhaz Abedin +4 more
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Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics [PDF]
, 2015 Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing.
Ghoneim, Mohamed T. +3 more
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Scientific Reports, 2017 The high operating voltage is a primary issue preventing the commercial application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM).
Ting Xu +4 more
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