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Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
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Energies, 2020 A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate ...
Hsiang-Chun Wang +4 more
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High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren +8 more
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Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
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Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
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Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
, 2021 We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen +9 more
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Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
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IEEE Journal of the Electron Devices Society, 2019 The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu +6 more
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Crystals, 2023 The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino +8 more
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Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
AIP Advances, 2020 In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin +9 more
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