Results 31 to 40 of about 2,359,473 (287)

HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation

, 2014
2 pagesInternational audienceAlGaN/GaN HEMTs are promising candidates for high frequency applications with high power and low noise. While switching applications demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric, Hamady, Saleem, Austin, Patrick, Gavelle, Mathieu, Beydoun, Bilal   +4 more
core   +4 more sources

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Advanced Electronic Materials, 2023
Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada   +11 more
doaj   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
doaj   +1 more source

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

IEEE Access, 2023
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang   +5 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AIP Advances, 2020
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian   +9 more
doaj   +1 more source

Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs

, 2022
S.373-376This work presents a quasi-normally-off gallium nitride (GaN) transistor with positive gate threshold voltage based on depletion-mode technology, suitable for gate drivers or logic circuits. Quasi-normally-off behaviour is achieved by the series
Kallfass, I., Weiss, B., Quay, Rüdiger, Ambacher, Oliver, Mönch, Stefan, Waltereit, Patrick, Costa, M., Barner, A., Reiner, Richard   +8 more
core   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Physics of collisionless scrape-off-layer plasma during normal and off-normal Tokamak operating conditions. [PDF]

, 1999
The structure of a collisionless scrape-off-layer (SOL) plasma in tokamak reactors is being studied to define the electron distribution function and the corresponding sheath potential between the divertor plate and the edge plasma. The collisionless model is shown to be valid during the thermal phase of a plasma disruption, as well as during the newly ...
Hassanein, A., Konkashbaev, I.
openaire   +2 more sources