Results 41 to 50 of about 386,002 (292)
Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
doaj +1 more source
Normally‐off AlGaN/GaN power tunnel‐junction FETs [PDF]
, 2012 We present normally-off AlGaN/Gan power tunnel-junction FETs (TJ-FETs) with high breakdown voltage, low off-state leakage current and low specific on-resistance. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing
Yuan, Li +9 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2019 The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu +6 more
doaj +1 more source
Physics of collisionless scrape-off-layer plasma during normal and off-normal Tokamak operating conditions. [PDF]
, 1999 The structure of a collisionless scrape-off-layer (SOL) plasma in tokamak reactors is being studied to define the electron distribution function and the corresponding sheath potential between the divertor plate and the edge plasma. The collisionless model is shown to be valid during the thermal phase of a plasma disruption, as well as during the newly ...
Hassanein, A., Konkashbaev, I.
openaire +2 more sources
Advanced Electronic Materials, 2023 Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu +11 more
doaj +1 more source
Crystals, 2023 The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng +5 more
doaj +1 more source
Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
IEEE Access, 2023 Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin +5 more
doaj +1 more source
GaN power IC normally-on and normally-off transistors technology and simulation
Journal of Physics: Conference Series, 2021 Abstract GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability.
V I Egorkin +5 more
openaire +1 more source
Synchronization Dynamics in Non-Normal Networks: The Trade-Off for Optimality [PDF]
Entropy, 2020 Synchronization is an important behavior that characterizes many natural and human made systems that are composed by several interacting units. It can be found in a broad spectrum of applications, ranging from neuroscience to power-grids, to mention a few.
Riccardo Muolo +3 more
openaire +5 more sources