Results 41 to 50 of about 2,359,473 (287)

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE Journal of the Electron Devices Society, 2020
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang   +8 more
doaj   +1 more source

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

IEEE Access, 2023
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noelle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher Maher   +6 more
doaj   +1 more source

Normally‐off AlGaN/GaN power tunnel‐junction FETs

, 2012
We present normally-off AlGaN/Gan power tunnel-junction FETs (TJ-FETs) with high breakdown voltage, low off-state leakage current and low specific on-resistance. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing
Yuan, Li, Zhou, Qi, Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou, Chen, Hongwei, Hongwei Chen, Li Yuan, Qi Zhou   +9 more
core   +1 more source

ARCHIVING, SECRECY AND OFF-SITE RESEARCH

, 2019
With: Cécile Boex, Leyla Dakhli, Omar Dewachi, Carolina Kobelinsky, Shourideh Molavi, William Walters, Shela Sheikh. See full abstracts below. Off-Site · "Archiving, secrecy and off-site research", A workshop of the ERC Off-Site - 9&10 September 2019 ...
Off-Site
core   +1 more source

High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

IEEE Journal of the Electron Devices Society, 2017
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano   +6 more
doaj   +1 more source

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa   +6 more
doaj   +1 more source

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

Electronics Letters, 2021
Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda   +9 more
doaj   +1 more source

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

, 2021
We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen, Nguyen, NT, Abu Riduan Md Foisal, Nguyen, HQ, Jarred Fastier-Wooller, Fastier-Wooller, J, Dao, DV, Nam-Trung Nguyen, Tanner, P, Nguyen, TH, Phan, HP, Nguyen, TK, Nguyen, T, Thanh Nguyen, Tuan-Khoa Nguyen, Dzung Viet Dao, Hoang-Phuong Phan, Foisal, ARM, Philip Tanner, Tuan-Hung Nguyen   +19 more
core   +1 more source

Recent advances in diamond MOSFETs with normally off characteristics

Functional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li, Xueqia Zhang, Shuopei Jiao, Yanrong Wang, Shuhua Wei, Jiang Yan, Jing Zhang, Xufang Zhang   +7 more
doaj   +1 more source

Central Nervous System Tumors Among Infants in Canada: A Report From CYP‐C

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Central nervous system (CNS) tumors in infants are rare, pose unique clinical challenges, and lack large‐scale evidence‐based data to guide management. This study seeks to describe CNS tumors in Canadian infants and to compare their outcomes with those of older children.
Samuel Sassine, Hallie Coltin, Sylvia Cheng, Lucie Lafay‐Cousin, Vanan Issai Magimairajan, Craig Erker, Stéphanie Vairy, Lynette Bowes, Adam Fleming, Donna Johnston, Sarah McKillop, Roona Sinha, Julie Bennett, Christina Coleman, Laura Wheaton, Shayna Zelcer, Samuele Renzi, Thai Hoa Tran   +17 more
wiley   +1 more source