Results 41 to 50 of about 3,063,705 (286)
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun +6 more
doaj +1 more source
Physics of collisionless scrape-off-layer plasma during normal and off-normal Tokamak operating conditions. [PDF]
The structure of a collisionless scrape-off-layer (SOL) plasma in tokamak reactors is being studied to define the electron distribution function and the corresponding sheath potential between the divertor plate and the edge plasma. The collisionless model is shown to be valid during the thermal phase of a plasma disruption, as well as during the newly ...
Hassanein, A., Konkashbaev, I.
openaire +2 more sources
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi +3 more
doaj +1 more source
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki +6 more
doaj +1 more source
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha +6 more
doaj +1 more source
Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi +9 more
doaj +1 more source
Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate [PDF]
Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects.
Zhou Jing +3 more
doaj +1 more source
ABSTRACT Pediatric gastroenteropancreatic neuroendocrine neoplasms (GEP‐NENs) are extremely rare and clinically heterogeneous. Management has largely been extrapolated from adult practice. This European Standard Clinical Practice Guideline (ESCP), developed by the EXPeRT network in collaboration with adult NEN experts, provides (adult) evidence ...
Michaela Kuhlen +23 more
wiley +1 more source
ABSTRACT Background Children with sickle cell disease (SCD) face multiple acute and chronic medical complications that may impact their quality of life as reported by patients themselves. Health‐related social needs (HRSNs), such as food and housing insecurity, are common in people with SCD, but the association between HRSNs and patient‐reported ...
Sarah J. Marks +5 more
wiley +1 more source
ABSTRACT Cup‐like nuclei are a distinctive morphological feature observed in certain cases of acute lymphoblastic leukemia (ALL). We provide evidence that they characterize DUX4/ERG ALL independently of IKZF1 deletion and reveal marked mitochondrial accumulation in this ALL subset.
Chloé Arfeuille +9 more
wiley +1 more source

