Results 61 to 70 of about 386,002 (292)
Robustness assessment of normally-off GaN HEMT technology with fluorine ions implantation co-integrated with normally-on GaN HEMT technology [PDF]
, 2021 Grâce aux propriétés exceptionnelles du nitrure de gallium GaN, telles que sa large bande interdite, son champ électrique critique élevé, sa capacité à fonctionner à des températures élevées et ses performances à haute fréquence, les transistors à haute ...
ALBANY, Florent
core
IEEE Access, 2023 A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun +6 more
doaj +1 more source
Tri-Gate Normally-Off GaN Power MISFET [PDF]
We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at
Matioli, Elison +2 more
core +1 more source
Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off [PDF]
, 2023 National audienceThe technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present
Reig, Benjamin +9 more
core +4 more sources
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
IEEE Journal of the Electron Devices Society, 2017 High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki +6 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha +6 more
doaj +1 more source
Electronics Letters, 2021 Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi +9 more
doaj +1 more source
Co-intégration de HEMT GaN hyperfréquence normally-off avec des normally-on [PDF]
, 2020 In the context of high frequency devices fabrication, normally-off transistors offer two benefits: they eliminate the need of a negative voltage supply in the case of Monolithic Microwave Integrated Circuit (MMIC) and would allow the fabrication of logic
Aroulanda, Sébastien
core
Sequence Skill Acquisition and Off-Line Learning in Normal Aging [PDF]
PLoS ONE, 2009 It is well known that certain cognitive abilities decline with age. The ability to form certain new declarative memories, particularly memories for facts and events, has been widely shown to decline with advancing age. In contrast, the effects of aging on the ability to form new procedural memories such as skills are less well known, though it appears ...
Brown, Rachel M. +2 more
openaire +4 more sources
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs [PDF]
, 2022 Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin +11 more
core +1 more source