Results 61 to 70 of about 2,359,473 (287)
A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
We demonstrated a multi-fin normally-off β -Ga _2 O _3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm ^2 , and a power figure-of-merit of 0.35 GW cm ^−2 .
Daiki Wakimoto +6 more
doaj +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source
ABSTRACT Relapsed and/or refractory (R/R) pediatric acute leukemia carries a dismal prognosis, largely driven by chemoresistance to conventional salvage therapy. The BH3‐mimetic venetoclax, combined with chemotherapy or hypomethylating agents, has demonstrated efficacy in small clinical trials.
Katherine S. Colman +9 more
wiley +1 more source
ABSTRACT Background Cytomegalovirus (CMV) is a recognized trigger of immune thrombocytopenia (ITP); however, its incidence and impact on disease course in children remain controversial. Therefore, we aimed to characterize the clinical course of pediatric patients with CMV‐associated ITP.
Oded Gilad +9 more
wiley +1 more source
A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su +8 more
doaj +1 more source
ABSTRACT Background Reduced bone mineral density (BMD) has been reported in survivors of childhood and young adult acute lymphoblastic leukaemia (ALL); however, data from cohorts treated with contemporary protocols and including matched controls remain limited.
Karen Schow Jensen +10 more
wiley +1 more source
Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel
International audienceGallium nitride based High Electron Mobility Transistors (HEMT) are powerful candidates for high frequency and high power applications.
Morancho, Frédéric +4 more
core +3 more sources
P-doped region below the AlGaN/GaN interface for normally-off HEMT [PDF]
International audienceDevelopment of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate.
Frederic Morancho +9 more
core +1 more source
ABSTRACT Background The Standards for Psychosocial Care for Children with Cancer and Their Families guide the provision of comprehensive psychosocial care. Parallel to research characterizing implementation of the Standards from the perspective of providers, this study examines implementation of the Standards from the perspective of parents of youth ...
Emily M. Pariseau +8 more
wiley +1 more source
ABSTRACT Pediatric intramedullary low‐grade gliomas (PIMLGGs) are rare neoplasms that present unique clinical and management challenges. Although surgery remains the primary tool for tissue diagnosis and decompression, complete gross‐total resection is frequently unfeasible due to the infiltrative nature of these lesions.
Olga M. Sergeenko +5 more
wiley +1 more source

