Results 71 to 80 of about 2,359,473 (287)

High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer

Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay, Mainali, Ganesh, Li, Xiaohang, Khandelwal, Vishal, Pan, Zuojian, García, Glen Isaac Maciel, Chettri, Dhanu   +6 more
core   +1 more source

Exercise Capacity, Physical Activity, Fatigue, and Neurocognitive Function in Adult Survivors of Childhood Acute Lymphoblastic Leukemia

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Adult survivors of childhood acute lymphoblastic leukemia (ALL) are at risk of reduced exercise capacity, decreased physical activity levels, persistent fatigue, and neurocognitive deficits. The aim was to investigate exercise capacity and physical activity levels of adult survivors of childhood ALL and their associations with ...
Laura Jess, Gustaf Glavå, Simon Skau, Hans‐Georg Kuhn, Maria Bäck, Marianne Jarfelt   +5 more
wiley   +1 more source

“We Cannot Talk as a Family”: Complexities of Survivorship Communication Among Hispanic/Latino Young Adult Survivors of Childhood Cancer, Parents, and Clinicians

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Young adult childhood cancer survivors (YA‐CCS) have an increased risk of treatment‐related health complications throughout their lives. Lifelong survivorship care is recommended, yet many YA‐CCS experience disruptions in care during pediatric‐to‐adult transitions and do not receive recommended survivorship care.
Kevin Shanchen Pu, Nicole Fernández‐Viña, Briana C. Martin‐Villa, Daniela Ramirez, Rebecca M. Lewinsohn, Mary Smith, Heidi Boynton, Lidia Schapira, Stephanie M. Smith   +8 more
wiley   +1 more source

A novel normally-off GaN power tunnel junction FET

, 2011
We demonstrate AlGaN/GaN tunnel junction FETs (TJ-FET) featuring a metal-2DEG Schottky junction at the source. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the
Yuan, Li, Zhou, Qi, Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou, Chen, Hongwei, Hongwei Chen, Li Yuan, Qi Zhou   +9 more
core   +1 more source

Identifying Patterns of Hospitalizations Among Childhood Cancer Survivors: A Population‐Based Study

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Childhood cancer survivors (CCSs) experience more hospitalizations than the general population. We aimed to identify distinct hospitalization patterns among Queensland CCSs and the associated characteristics. Methods Cases (aged ≤14 years) diagnosed between 1995 and 2019 while residents of Queensland were identified through the ...
Hai Pham, Teyl Engstrom, Peter Baade, Natalie Bradford, Sarah Pont, Louise Marquart‐Wilson, Natasha Nassar, Jason D. Pole   +7 more
wiley   +1 more source

The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2

Micro and Nano Engineering, 2020
The hydrogen plasma treatment of single crystal diamond was carried out by microwave plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated diamond field-effect transistors (FETs) with different gate lengths were prepared by
Chi Sun, Tingting Hao, Junjie Li, Haitao Ye, Changzhi Gu   +4 more
doaj   +1 more source

Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study

AIP Advances, 2022
A combination of recessed-gate and gate-field plate in lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer Aided Design study to improve its ON resistance (RON) and breakdown voltage ...
Huy-Binh Do, Anh-Vu Phan-Gia, Van Quy Nguyen, Maria Merlyne De Souza   +3 more
doaj   +1 more source

Tri-Gate Normally-Off GaN Power MISFET

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at
Matioli, Elison, Palacios, Tomas, Lu, Bin   +2 more
core   +1 more source

Classical Complement Pathway Inhibition in a Pediatric Patient With Refractory Immune Thrombocytopenia

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Pediatric refractory immune thrombocytopenia (rITP) is generally characterized by persistent thrombocytopenia and failure to achieve a sustained response to multiple standard therapies. We report a 4‐year‐old female with congenital tufting enteropathy, post‐intestinal transplant patient on immunosuppressants, who developed severe rITP ...
Sarah Hsieh, Susmita Sarangi, Caileigh Pudela, Catherine M. Broome, Tara K. Suntum   +4 more
wiley   +1 more source

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

, 2022
Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin, Frederic Morancho, Chaymaa Haloui, Morancho, Frédéric, Daniel Rouly, Austin, Patrick, Karine Isoird, Josiane Tasselli, Rouly, Daniel, Tasselli, Josiane, Haloui, Chaymaa, Isoird, Karine   +11 more
core   +1 more source