Results 71 to 80 of about 386,002 (292)
HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation [PDF]
2 pagesInternational audienceAlGaN/GaN HEMTs are promising candidates for high frequency applications with high power and low noise. While switching applications demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric +4 more
core +4 more sources
Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate [PDF]
Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects.
Zhou Jing +3 more
doaj +1 more source
ABSTRACT Pediatric gastroenteropancreatic neuroendocrine neoplasms (GEP‐NENs) are extremely rare and clinically heterogeneous. Management has largely been extrapolated from adult practice. This European Standard Clinical Practice Guideline (ESCP), developed by the EXPeRT network in collaboration with adult NEN experts, provides (adult) evidence ...
Michaela Kuhlen +23 more
wiley +1 more source
A Bibliometric Analysis of Publications in Uremic Toxins From 1991 to 2024
ABSTRACT Background Uremic toxins are a growing area of research in nephrology, with significant implications in the progression and treatment of chronic kidney disease (CKD) and the management of end‐stage kidney disease (ESKD). This bibliometric analysis aims to evaluate the global research trends, key contributors, and the impact of publications in ...
Yuh‐Shan Ho +7 more
wiley +1 more source
ABSTRACT Background Chronic micro‐inflammation in patients with end‐stage renal disease (ESRD) is a significant driver of cardiovascular complications and diminished quality of life. While standard hemodialysis (SHD) effectively manages small‐molecule clearance, its ability to remove medium‐to‐large uremic toxins—the primary catalysts of systemic ...
Hongwei Zuo +5 more
wiley +1 more source
A novel normally-off GaN power tunnel junction FET [PDF]
We demonstrate AlGaN/GaN tunnel junction FETs (TJ-FET) featuring a metal-2DEG Schottky junction at the source. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the
Yuan, Li +9 more
core +1 more source
ABSTRACT Introduction This final analysis of a multicenter, prospective postmarketing surveillance study evaluated the safety of daprodustat in patients with chronic kidney disease anemia in routine clinical practice in Japan. Methods Patients who initiated daprodustat between September 2020 and July 2022 were registered.
Tadao Akizawa +7 more
wiley +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source
Enteropathogenic E. coli (EPEC) infects the human intestinal epithelium, resulting in severe illness and diarrhoea. In this study, we compared the infection of cancer‐derived cell lines with human organoid‐derived models of the small intestine. We observed a delayed in attachment, inflammation and cell death on primary cells, indicating that host ...
Mastura Neyazi +5 more
wiley +1 more source
GaAs integrated circuits with normally-off processes : a real market opportunity [PDF]
GaAs normally-off FET processes have now reached a maturity level such that their application domains extend to VLSI digital circuits, analogue and mixed-signal analogue/digital circuits. They represent a real market opportunity for the GaAs industry and
Gourrier, Serge
core +1 more source

