Results 91 to 100 of about 386,002 (292)

Gut microbiome and aging—A dynamic interplay of microbes, metabolites, and the immune system

FEBS Letters, EarlyView.
Age‐dependent shifts in microbial communities engender shifts in microbial metabolite profiles. These in turn drive shifts in barrier surface permeability of the gut and brain and induce immune activation. When paired with preexisting age‐related chronic inflammation this increases the risk of neuroinflammation and neurodegenerative diseases.
Aaron Mehl, Eran Blacher
wiley   +1 more source

Normally-off transistor topologies in gallium nitride technology [PDF]

, 2020
Devices based on group-III-nitride compound semiconductors (AlN, InN, GaN) are gaining more and more momentum in modern electronics. Based on their excellent material properties like high critical electric fields, carrier concentrations and mobilities ...
Lükens, Gerrit
core   +1 more source

Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study

AIP Advances, 2022
A combination of recessed-gate and gate-field plate in lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer Aided Design study to improve its ON resistance (RON) and breakdown voltage ...
Huy-Binh Do, Anh-Vu Phan-Gia, Van Quy Nguyen, Maria Merlyne De Souza   +3 more
doaj   +1 more source

Diversity and complexity in neural organoids

FEBS Letters, EarlyView.
Neural organoid research aims to expand genetic diversity on one side and increase tissue complexity on the other. Chimeroids integrate multiple donor genomes within single organoids. Self‐organising multi‐identity organoids, exogenous cell seeding, or enforced assembly of region‐specific organoids contribute to tissue complexity.
Ilaria Chiaradia, Madeline A. Lancaster
wiley   +1 more source

P-doped region below the AlGaN/GaN interface for normally-off HEMT [PDF]

, 2014
International audienceDevelopment of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate.
Frederic Morancho, Patrick Austin, Morancho, Frédéric, Hamady, Saleem, Austin, Patrick, Mathieu Gavelle, GAVELLE, Mathieu, Saleem Hamady, Beydoun, Bilal, Bilal Beydoun   +9 more
core   +1 more source

300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio [PDF]

, 2014
300??C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique.
Xu, Zhe, Cai, Yong, Li, Xiaoping, Yang, Zhenchuang, Wu, Wengang, Hao, Yue, Zhang, Jincheng, Yu, Min, Ma, Xiaohua, Yang, Zhen, Wang, Jinyan, Xie, Bin, Wang, Maojun, Liu, Jingqian   +13 more
core   +3 more sources

Hyperosmotic stress induces PARP1‐mediated HPF1‐dependent mono(ADP‐ribosyl)ation

FEBS Letters, EarlyView.
Sorbitol‐induced hyperosmotic stress rapidly induces reversible mono(ADP‐ribosyl)ation (MARylation) on PARP1 without the signs of genotoxic signaling. We show that PARP1 autoMARylation is HPF1 dependent and forms hydroxylamine‐resistant O‐glycosidic linkages.
Anna Georgina Kopasz, Mihály Mérey, Rebeka Vásárhelyi, Ramóna Pék, Victor Imburchia, László Henn, Adrián Kószó, Nicholas D. Lakin, Ivan Ahel, Sébastien Huet, Ágnes Czibula, Gyula Timinszky   +11 more
wiley   +1 more source

The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2

Micro and Nano Engineering, 2020
The hydrogen plasma treatment of single crystal diamond was carried out by microwave plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated diamond field-effect transistors (FETs) with different gate lengths were prepared by
Chi Sun, Tingting Hao, Junjie Li, Haitao Ye, Changzhi Gu   +4 more
doaj   +1 more source

Organizing the interface—Plasma membrane architecture and receptor dynamics in virus‐cell interactions

FEBS Letters, EarlyView.
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley   +1 more source

Normally-on / normally-off integrated operation on GaN HEMT technology for power and microwave applications [PDF]

, 2018
Ce document présente les travaux de thèse ayant pour objet la recherche et développement d’une technologie co-intégrée HEMT GaN normale-on/normally-off compatible avec les matériaux et procédés technologiques de la technologie normally-on hyperfréquence.
Trinh Xuan, Linh
core