Results 111 to 120 of about 2,359,473 (287)
Quasi-Normally-Off AlGaN/GaN HEMTs with Strained Comb Gate for Power Electronics Applications
, 2020 The quasi-normally-off operation of AlGaN/GaN HEMTs was realized using strain engineering. The dual-layer silicon nitride (SiNx) stressors applied compression to the gate region in devices, and the introduced compression translated to piezoelectric ...
Chan, Mansun +5 more
core +1 more source
Degradation mechanism of the von Willebrand factor A2 domain by nattokinase
FEBS Letters, EarlyView.Nattokinase, a natto‐derived protease, exhibits potent antithrombotic effects. This study demonstrates that nattokinase directly cleaves the von Willebrand factor (vWF) A2 domain in vitro. Unlike the native regulator ADAMTS13, nattokinase degrades folded vWF independently of shear stress.
Ryuichi Hyakumoto +3 more
wiley +1 more source
TechnologiesThis study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
doaj +1 more source
, 2013 281 σ.Σκοπός της παρούσας διπλωματικής εργασίας είναι η μελέτη, ο σχεδιασμός, η προσομοίωση και η κατασκευή κυκλωμάτων οδήγησης κατάλληλα για τους ημιαγωγικούς διακόπτες JFETs καρβιδίου του πυριτίου.
Stefas, Pantelis E. +1 more
core +1 more source
FEBS Letters, EarlyView.We present robust protocols for the preparation of supported lipid bilayers (SLBs) incorporating either Salmonella smooth LPS or outer membrane vesicles (OMVs). We use a combination of quartz crystal microbalance with dissipation (QCM‐D) and fluorescence microscopy to both characterize the SLBs of various compositions and to probe their interactions ...
Hudson P. Pace +6 more
wiley +1 more source
A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
, 2022 S.141-144We present a new approach for normally-off transistors based on a recess leading to a laterally induced positive threshold voltage. The fabrication process is demonstrated to yield devices with positive threshold voltage.
Rüster, Joachim +8 more
core +1 more source
Implications of the interface effects in the normally-off type GaAs MESFETs
, 1978 The variations of I- V characteristics under substrate bias are compared for normally-on and normally-off type planar GaAs-MESFETs with long-channel. The experimental results are interpreted by superimposing to the Schottky gate space-charge region both ...
Nuzillat, G. +3 more
core +1 more source
FEBS Letters, EarlyView.Proteostasis and the gut microbiota play a key role in shaping host physiology. Microbiota‐derived metabolites, vitamins, and RNA modulate host proteostasis. Findings from model systems, including C. elegans, indicate microbes can either stabilize or disrupt host proteostasis.
Abhishek Anil Dubey, Maria Ermolaeva
wiley +1 more source
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. [PDF]
Micromachines (Basel), 2022 Zhang P +10 more
europepmc +1 more source
, 2011 We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their
Takayuki Sugiyama +5 more
core +1 more source