Results 121 to 130 of about 386,002 (292)
Application of normally-off SiC-JFETs in photovoltaic inverters [PDF]
, 2022 S.1089-1094In this paper the implementation and the performance of 1200 V / 30 A / 65 m Omega normally-off SIC - JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si - IGBTs.
Wilhelm, C. +3 more
core
FEBS Letters, EarlyView.Drosophila park mutants serve as a model for Parkinson's disease. We used this strain to investigate the connection between oxidative stress and the circadian clock mechanism. We showed that increased oxidative stress affects the physiology of pacemaker cells, disrupting their daily structural plasticity. Lack of rhythmic signaling from pacemaker cells
Kamila Zientara +3 more
wiley +1 more source
980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors [PDF]
, 2011 In this work, we succeeded in developing high performance normally-off SiC buried gate static induction transistors (SiC-BGSITs). To achieve the normally-off characteristics, design parameters around the channel region were optimized and process ...
Akio Takatsuka +4 more
core +1 more source
Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT
Power Electronic Devices and ComponentsDynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated.
Yitai Zhu +8 more
doaj +1 more source
Photopic ON- and OFF- Responses in Korean Normal Subjects
Journal of the Korean Ophthalmological Society, 2008 Purpose: To explore the effects of stimulus duration, stimulus intensity, and background luminance on the amplitude and waveform of the ON- and OFF- responses of photopic ERG and to provide standard parameters of ON- and OFF- responses for normal Korean populations.
Su-Eun Park +4 more
openaire +1 more source
AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation [PDF]
, 2007 AlGaN/GaN HEMTs with a thin InGaN cap layer have been proposed to implement the normally off HEMTs. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised, which leads to the normally off ...
Ito, M. +3 more
core +1 more source
Working Towards a Normally Off GaN Based MOSHEMT [PDF]
, 2016 As the demand for smaller and more efficient electronics continues to grow, the technological advances of silicon begins to plateau. For this reason, researchers have been increasingly interested in other semiconductor materials, such as III-V ...
core
A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions [PDF]
, 2017 International audienceHigh electron mobility transistors based on Gallium Nitride are promising devices for high frequency and high-power applications.
Frederic Morancho +5 more
core +1 more source
Technological developments in pursuit of recess-free normally-OFF AlGaN/GaN HEMTs [PDF]
, 2021 Thanks to GaN's high breakdown electric field, high electron mobility and saturation velocity, GaN-based devices are considered promising candidates for power switching and RF power amplifier applications.
Cheng, Wei-Chih
core
High transconductance-normally-off GaN MODFETs
Electronics Letters, 1995 Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 /spl mu/m, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45
A. Özgür +7 more
openaire +1 more source