Results 101 to 110 of about 386,002 (292)
FEBS Letters, EarlyView.Embryo‐like structures (stembryos) are an innovative tool, but they are hindered by experimental variability and limited developmental potential. DNA methylation is crucial for mammalian development, but its status in stembryo models is poorly characterized.
Sara Canil +4 more
wiley +1 more source
FEBS Letters, EarlyView.Ascidian Ciona larvae initially show strong clockwise tail twisting, which is largely corrected during development. However, a small residual twist remains. This study shows that organized helical myofibrils in tail muscles mechanically stabilize this residual asymmetry, preventing complete restoration of bilateral symmetry and revealing how embryos ...
Yuki S. Kogure +3 more
wiley +1 more source
AIP Advances, 2020 In this study, normally off AlN/Al0.05Ga0.95N high-electron-mobility transistors (HEMTs) on a Si substrate were fabricated by adjusting the surface states of the heterostructure.
Weihang Zhang +5 more
doaj +1 more source
The human gut microbiome across the life course
FEBS Letters, EarlyView.Despite significant individual variation and continuous change throughout life, the human gut microbiome follows some life stage‐specific trends. This article provides a brief overview of how gut microbiome composition shifts across different phases of life. Created in BioRender. Özkurt, E. (2026) https://BioRender.com/8q4nrnc.
Alise J. Ponsero +4 more
wiley +1 more source
Low Leakage Normally-off Tri-gate GaN MISFET [PDF]
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off ...
Matioli, Elison +2 more
core +1 more source
Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices [PDF]
, 2004 We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs) on a Si substrate. The AlGaN/AlN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was
Kohji Hataya +4 more
core +1 more source
Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel [PDF]
, 2014 International audienceGallium nitride based High Electron Mobility Transistors (HEMT) are powerful candidates for high frequency and high power applications.
Morancho, Frédéric +4 more
core +2 more sources
Degradation mechanism of the von Willebrand factor A2 domain by nattokinase
FEBS Letters, EarlyView.Nattokinase, a natto‐derived protease, exhibits potent antithrombotic effects. This study demonstrates that nattokinase directly cleaves the von Willebrand factor (vWF) A2 domain in vitro. Unlike the native regulator ADAMTS13, nattokinase degrades folded vWF independently of shear stress.
Ryuichi Hyakumoto +3 more
wiley +1 more source
GaN for power devices: Benefits, applications, and normally-off technologies [PDF]
, 2017 Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200-1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in
,, Longobardi, G
core
FEBS Letters, EarlyView.An unexpected alternative interaction site for ethyl viologen was identified in formate dehydrogenase 1 from Methylorubrum extorquens. Combined mutagenesis, kinetic analysis, and docking revealed that aromatic residues near an iron–sulfur cluster enable flavin mononucleotide‐independent electron transfer, offering a framework for engineering improved ...
Eleni G. Poloniataki, Yong Hwan Kim
wiley +1 more source