Results 101 to 110 of about 2,359,473 (287)

Prospects and Development of Vertical Normally-off JFETs in SiC [PDF]

, 2009
This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Bakowski, M.
core  

Haploidentical Hematopoietic Cell Transplantation for Infants With X‐Linked Severe Combined Immunodeficiency Using Post‐Transplant Cyclophosphamide

Pediatric Blood &Cancer, EarlyView.
Shuhei Takahashi, Akito Kawachi, Dan Tomomasa, Eri Watanabe, Yuji Fujita, Yuya Sato, Masahiro Sekiguchi, Kentaro Watanabe, Moe Hidaka, Akihiro Hoshino, Takahiro Kamiya, Masatoshi Takagi, Hirokazu Kanegane, Motohiro Kato   +13 more
wiley   +1 more source

Residual tail twisting in ascidian larvae is stabilized by asymmetric myofibrils that resist bilateral symmetry restoration

FEBS Letters, EarlyView.
Ascidian Ciona larvae initially show strong clockwise tail twisting, which is largely corrected during development. However, a small residual twist remains. This study shows that organized helical myofibrils in tail muscles mechanically stabilize this residual asymmetry, preventing complete restoration of bilateral symmetry and revealing how embryos ...
Yuki S. Kogure, Misaki K. Nishio, Satoru Okuda, Kohji Hotta   +3 more
wiley   +1 more source

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications. [PDF]

Micromachines (Basel), 2023
Liu AC, Tu PT, Chen HC, Lai YY, Yeh PC, Kuo HC.   +5 more
europepmc   +1 more source

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

, 2013
The conditions for preparing normally-off GaN devices incorporating semi-insulating (SI) GaN materials are explored. The properties of SI GaN where carbon behaves as a deep level acceptor are predicted using a Shockley diagram. Metal-oxide-semiconductor (
S. Lawrence Selvaraj, Osamu Oda, Yusuke Sakai, Takashi Egawa   +3 more
core   +1 more source

GaAs integrated circuits with normally-off processes : a real market opportunity [PDF]

, 1992
GaAs normally-off FET processes have now reached a maturity level such that their application domains extend to VLSI digital circuits, analogue and mixed-signal analogue/digital circuits. They represent a real market opportunity for the GaAs industry and
Gourrier, Serge
core   +1 more source

The human gut microbiome across the life course

FEBS Letters, EarlyView.
Despite significant individual variation and continuous change throughout life, the human gut microbiome follows some life stage‐specific trends. This article provides a brief overview of how gut microbiome composition shifts across different phases of life. Created in BioRender. Özkurt, E. (2026) https://BioRender.com/8q4nrnc.
Alise J. Ponsero, Basak Bahcivanci, Antonietta Hayhoe, Animesh Acharjee, Ezgi Özkurt   +4 more
wiley   +1 more source

Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques

IEEE Journal of the Electron Devices Society, 2019
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied.
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay   +8 more
doaj   +1 more source

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnO_x Dielectric Layer Formed by Thermal Oxidation of Sn. [PDF]

Materials (Basel), 2022
He S, Wang Y, Chen G, Wang J, Li Q, Zhang Q, Wang R, Zhang M, Wang W, Wang H.   +9 more
europepmc   +1 more source

Low Leakage Normally-off Tri-gate GaN MISFET

, 2012
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off ...
Matioli, Elison, Palacios, Tomas, Lu, Bin, Tomas Palacios, Elison Matioli, Bin Lu   +5 more
core   +1 more source