Results 51 to 60 of about 386,002 (292)

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AIP Advances, 2020
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian   +9 more
doaj   +1 more source

Normally-On and Normally-Off SiC JFETs Gate Drive Circuits: Application to Boost Converter for Photovoltaic Systems [PDF]

, 2013
281 σ.Σκοπός της παρούσας διπλωματικής εργασίας είναι η μελέτη, ο σχεδιασμός, η προσομοίωση και η κατασκευή κυκλωμάτων οδήγησης κατάλληλα για τους ημιαγωγικούς διακόπτες JFETs καρβιδίου του πυριτίου.
Stefas, Pantelis E., Στέφας, Παντελής Ε.   +1 more
core   +1 more source

Normal operators with\cr highly incompatible off-diagonal corners

Studia Mathematica, 2021
submitted
Marcoux, Laurent W., Radjavi, Heydar, Zhang, Yuanhang   +2 more
openaire   +3 more sources

RECESSED-GATE NORMALLY-OFF GaN MOSFET TECHNOLOGIES [PDF]

, 2013
Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11)San Juan, Puerto-Rico, 18th - 21st December 2011We have fabricated and investigated several types of GaN MOSFETs with normally-off operation.
Hahm, S.-H., YOUNG-HO BAE, DONG-SEOK KIM, Kim, K.-W., SUNG-HO HAHM, Im, K.-S., Cristoloveanu, S., Kim, D.-S., Kang, H.-S., KI-WON KIM, DO-KYWN KIM, Lee, J.-H., Bae, Y.-H., SORIN CRISTOLOVEANU, KI-SIK IM, Chang, S.-J., SUNG-JAE CHANG, HEE-SUNG KANG, JUNG-HEE LEE   +18 more
core   +1 more source

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE Journal of the Electron Devices Society, 2020
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang   +8 more
doaj   +1 more source

High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer [PDF]

Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition.
Kumar, Mritunjay, Mainali, Ganesh, Li, Xiaohang, Khandelwal, Vishal, Pan, Zuojian, García, Glen Isaac Maciel, Chettri, Dhanu   +6 more
core   +1 more source

(Invited) High Power Normally-Off GaN MOSFET [PDF]

, 2011
The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN ...
Takehiko Nomura, Takuya Kokawa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yoshihiro Satoh, Nariaki Ikeda, Sadahiro Kato, Hiroshi Kambayashi   +8 more
core   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications [PDF]

In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works on enhancement mode operation with a threshold voltage of ∼4 V.
Kumar, Mritunjay, Mainali, Ganesh, Yuvaraja, Saravanan, Li, Xiaohang, Khandelwal, Vishal, Salcedo, Juan Huerta, Chettri, Dhanu   +6 more
core   +1 more source