Results 21 to 30 of about 2,359,473 (287)
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
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Un interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaN [PDF]
, 2014 National audienceAlGaN/GaN HEMTs are very promising candidates for high frequency applications with high power and low noise. Unfortunately, while switching applications strongly demand normally-off operation, conventional HEMTs are normally-on.
Morancho, Frédéric +4 more
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High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren +8 more
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Energies, 2020 A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate ...
Hsiang-Chun Wang +4 more
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Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
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Maximum hands-off control without normality assumption [PDF]
2016 American Control Conference (ACC), 2016 5 pages, 1 ...
Takuya Ikeda, Masaaki Nagahara
openaire +3 more sources
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
doaj +1 more source
Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Advanced Photonics Research, 2022 Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness.
Youngbin Yoon +2 more
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IEEE Journal of the Electron Devices Society, 2019 The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu +6 more
doaj +1 more source
HEMT GaN Normally Off Reliability comparison
, 2021 International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
core +1 more source