Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [PDF]
Micromachines, 2019 In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton ...
Dongmin Keum, Hyungtak Kim
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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT [PDF]
Micromachines, 2021 The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu +10 more
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Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication [PDF]
MicromachinesThis study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin +4 more
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Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini +2 more
exaly +3 more sources
Recent advances in diamond MOSFETs with normally off characteristics [PDF]
Functional DiamondDiamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li +7 more
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Cointegration of normally-off and normally-on high frequency GaN HEMTs [PDF]
, 2020 Dans le cadre de la fabrication de dispositifs hyperfréquences, la fonctionnalité normally-off présente deux avantages : elle permet d’une part de s’affranchir de la source de tension négative pour les circuits intégrés monolithiques hyperfréquences (Monolithic Microwave Integrated Circuit – MMIC) et, d’autre part, la co-intégration de transistors ...
Aroulanda, Sébastien
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HEMT GaN Normally Off Reliability comparison [PDF]
, 2021 Recently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared using TCAD Sentaurus simulation: Gate Recess, P-GaN, and Buried P-GaN.
Phulpin, Tanguy, Dinh, Thy Bich Hop
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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors [PDF]
Materials, 2019 Fabrizio Roccaforte +2 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
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