Results 21 to 30 of about 3,063,705 (286)
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
doaj +2 more sources
Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication [PDF]
MicromachinesThis study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process.
Yinmiao Yin +4 more
doaj +2 more sources
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
doaj +2 more sources
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Oliver Hilt +2 more
exaly +3 more sources
Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study
AIP Advances, 2022 A combination of recessed-gate and gate-field plate in lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer Aided Design study to improve its ON resistance (RON) and breakdown voltage ...
Huy-Binh Do +3 more
doaj +2 more sources
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
doaj +1 more source
Energies, 2020 A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate ...
Hsiang-Chun Wang +4 more
doaj +1 more source
High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren +8 more
doaj +1 more source
Micromachines, 2023 In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (
Jeong-Gil Kim +3 more
doaj +1 more source
Maximum hands-off control without normality assumption [PDF]
2016 American Control Conference (ACC), 2016 5 pages, 1 ...
Takuya Ikeda, Masaaki Nagahara
openaire +2 more sources