Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing [PDF]
Nanomaterials, 2023 Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era.
Yeongkwon Kim +2 more
doaj +2 more sources
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. [PDF]
Micromachines (Basel), 2022 A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was ...
Zhang P +10 more
europepmc +2 more sources
Recent advances in diamond MOSFETs with normally off characteristics
Functional DiamondDiamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li +7 more
doaj +2 more sources
A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
Applied Physics ExpressWe demonstrated a multi-fin normally-off β -Ga _2 O _3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm ^2 , and a power figure-of-merit of 0.35 GW cm ^−2 .
Daiki Wakimoto +6 more
doaj +2 more sources
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Meriem Bouchilaoun +2 more
exaly +3 more sources
Normally-OFF Diamond Reverse Blocking MESFET [PDF]
IEEE Transactions on Electron Devices, 2021 Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond.
J. Cañas +6 more
semanticscholar +4 more sources
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zhang Jincheng +2 more
exaly +3 more sources
An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices [PDF]
Scientific Reports, 2022 Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material ...
Reem Alhasani +6 more
doaj +2 more sources
Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [PDF]
Micromachines, 2019 In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton ...
Dongmin Keum, Hyungtak Kim
doaj +2 more sources
The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT [PDF]
Micromachines, 2021 The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu +10 more
doaj +2 more sources