Normally-OFF Diamond Reverse Blocking MESFET [PDF]
IEEE Transactions on Electron Devices, 2021 Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature.
J. Canas +6 more
core +6 more sources
Normally-off GaN Transistors for Power Applications [PDF]
Journal of Physics: Conference Series, 2014 Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V.
Hilt, O. +6 more
openaire +2 more sources
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length [PDF]
Nanoscale Research Letters, 2017 We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien +7 more
doaj +2 more sources
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini +3 more
doaj +3 more sources
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors [PDF]
Materials, 2019 Fabrizio Roccaforte +2 more
exaly +2 more sources
Cointegration of normally-off and normally-on high frequency GaN HEMTs
, 2020 Dans le cadre de la fabrication de dispositifs hyperfréquences, la fonctionnalité normally-off présente deux avantages : elle permet d’une part de s’affranchir de la source de tension négative pour les circuits intégrés monolithiques hyperfréquences (Monolithic Microwave Integrated Circuit – MMIC) et, d’autre part, la co-intégration de transistors ...
Aroulanda, Sébastien
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
Prospects and Development of Vertical Normally-off JFETs in SiC
Journal of Telecommunications and Information Technology, 2023 This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Mietek Bakowski
doaj +1 more source
Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren +7 more
doaj +1 more source
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
doaj +1 more source