Results 81 to 90 of about 14,907 (188)

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

Triad-NVM: Persistent-Security for Integrity-Protected and Encrypted Non-Volatile Memories (NVMs)

, 2018
Emerging Non-Volatile Memories (NVMs) are promising contenders for building future memory systems. On the other side, unlike DRAM systems, NVMs can retain data even after power loss and thus enlarge the attack surface. While data encryption and integrity verification have been proposed earlier for DRAM systems, protecting and recovering secure memories
Awad, Amro, Njilla, Laurent, Ye, Mao
openaire   +2 more sources

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

REAP-NVM: Resilient Endurance-Aware NVM-Based PUF Against Learning-Based Attacks

2025 Design, Automation & Test in Europe Conference (DATE)
NVM-based PUFs offer secure authentication and cryptographic applications by exploiting NVMs' MLC to generate diverse, ML-attack-resistant responses. Yet, frequent writes degrade these PUFs, lowering reliability and lifespan. This paper presents a model to assess endurance effects on NVM PUFs, guiding the creation of more robust PUFs. Our novel NVM PUF
Nassar, Hassan, Wei, Ming-Liang, Yang, Chia-Lin, Henkel, Jörg, Chen, Kuan-Hsun   +4 more
openaire   +1 more source

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo, Kyoung Min Choi, Geun Tae Park, Jin Ho Chang, Woo Young Choi   +4 more
wiley   +1 more source

Prospects for terahertz imaging the human skin cancer with the help of gold-nanoparticles-based terahertz-to-infrared converter

, 2019
The design is suggested, and possible operation parameters are discussed, of an instrument to inspect a skin cancer tumour in the terahertz (THz) range, transferring the image into the infrared (IR) and making it visible with the help of standard IR ...
A. G. Paulish, AS Darling, AV Postnikov, AV Postnikov, B. B. Hu, B. Lesiak, C Loo, Cecilie Ro/nne, CL Huang, DALI, E Pickwell, Elizabeth Berry, H Okamoto, I ELSAYED, J. W. Lynn, JH Chen, JH Son, K Moldosanov, KA Moldosanov, KA Moldosanov, KFA Ross, N. E. Christensen, NW Ashcroft, PS Zagubisalo, R Kubo, R. KUBO, RM Woodward, RM Woodward, RM Woodward, S.-J. Oh, SA Kuznetsov, SA Kuznetsov, Sergei Alexandrovich Kuznetsov, Sergey A. Kuznetsov, Seung Jae Oh, Seung Jae Oh, SJ Oh, T Rowland, Tschang-Uh Nahm, V.P. Wallace, VP Wallace, X Huang, Yu. Ya. Gafner, ZM Zhang   +43 more
core   +1 more source

MixSave: Tiering-Cooperative Energy-Efficient Scheme for Hybrid Storage System [PDF]

Jisuanji kexue yu tansuo
Taking advantage of green energy is becoming increasingly popular. However, when it comes to the storage I/O, where storage devices usually schedule nodes based on the intensity of the storage workload, the irregular fluctuations of green energy lead to ...
LI Daping, SHI Qingyu, TANG Yibin, HU Zhekun, GAO Yi
doaj   +1 more source

Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory

International Journal of Electrochemical Science, 2012
This work presents a novel TaN-Al2O3-Si3N4-SiO2-Silicon (TANOS) nonvolatile memory (NVM) with a structure that comprises Pi-gate (π-gate) nanowires (NWs) structure.
Yu-Hsien Lin, Yung-Chun Wu, Min-Feng Hung, Jiang-Hung Chen   +3 more
doaj   +1 more source

Persistent Memory Programming Abstractions in Context of Concurrent Applications

, 2017
The advent of non-volatile memory (NVM) technologies like PCM, STT, memristors and Fe-RAM is believed to enhance the system performance by getting rid of the traditional memory hierarchy by reducing the gap between memory and storage.
Shapiro, Marc, Singh, Ajay, Thomas, Gael
core  

Left Ventricular Noncompaction

Majalah Kardiologi Indonesia, 2013
In normal human hearts of children and adults the leftventricle (LV) has up to 3 prominent trabeculations andis, thus, less trabeculated than the right ventricle.
Beny Togatorop, Amiliana M Soesanto
doaj   +1 more source