Results 11 to 20 of about 7,990 (195)
4H-SiC trench IGBT with lower on-state voltage drop [PDF]
Superlattices and Microstructures, 2017 Abstract In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P+ shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure.
Yan-juan Liu +3 more
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IEEE Journal of the Electron Devices Society, 2020 A novel trench shielded planar gate IGBT (TSPG-IGBT) with self-biased pMOS is proposed in this paper. It features a P-layer beneath the trench of the TSPG-IGBT to form a self-biased pMOS, which provides an additional path for the hole current and clamps ...
Rongxin Chen, Bo Yi, Xing Bi Chen
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On-state voltage drop based power limit detection of IGBT inverters [PDF]
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 Power density is a key performance factor in order to reduce the cost and size of a power converter. Because of the unknown junction temperature, today’s design margins are relatively high to ensure safe and a reliable operation. In this paper, the on-state voltage drop is measured online for all insulated gate bipolar transistors (IGBTs) in the ...
Trintis, Ionut; id_orcid 0000-0001-9581-8910 +3 more
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Zhongguo dianli, 2023 To address the issues of the lack of real-time measurement, low accuracy of pseudo measurement, and the assumption of constant system state process noise in existing dynamic state estimation (DSE) methods for medium voltage distribution networks, this ...
Junxiang TIAN, Tie CHEN, Bin CHEN
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An alternative design and implementation of a solid state on-load tap changer
Journal of Mechatronics, Electrical Power, and Vehicular Technology, 2021 Power quality and reliability are of great importance in the modern world, whether it be the power generated by the power utilities or the power consumed by the customer respectively.
Benjamin Kommey +3 more
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A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy
Energies, 2019 On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires.
Qingyi Kong +4 more
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Geophysical Research Letters, 2020 Under the slow varying ambient electric field, positive leader propagation exhibits steps characterized by intense reilluminations and abrupt elongations. These steps are currently not well understood.
Shengxin Huang +10 more
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Batteries, 2022 Open circuit voltage relaxation to a steady state value occurs, and is measured, at the terminals of a lithium-ion battery when current stops flowing. It is of interest for use in determining state of charge and state of health. As voltage relaxation can
David Theuerkauf, Lukas Swan
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Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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