Results 11 to 20 of about 77,923,058 (250)
IEEE Journal of the Electron Devices Society, 2020 A novel trench shielded planar gate IGBT (TSPG-IGBT) with self-biased pMOS is proposed in this paper. It features a P-layer beneath the trench of the TSPG-IGBT to form a self-biased pMOS, which provides an additional path for the hole current and clamps ...
Rongxin Chen, Bo Yi, Xing Bi Chen
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A hybrid multilevel converter for medium and high voltage applications [PDF]
, 2010 This paper investigates the suitability of the hybrid multilevel converter for medium and high voltage application. The converter operation, modulation, and capacitor voltage balancing method are described in detail.
Ahmed, Khaled +4 more
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Zhongguo dianli, 2023 To address the issues of the lack of real-time measurement, low accuracy of pseudo measurement, and the assumption of constant system state process noise in existing dynamic state estimation (DSE) methods for medium voltage distribution networks, this ...
Junxiang TIAN, Tie CHEN, Bin CHEN
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An alternative design and implementation of a solid state on-load tap changer
Journal of Mechatronics, Electrical Power, and Vehicular Technology, 2021 Power quality and reliability are of great importance in the modern world, whether it be the power generated by the power utilities or the power consumed by the customer respectively.
Benjamin Kommey +3 more
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A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy
Energies, 2019 On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires.
Qingyi Kong +4 more
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Geophysical Research Letters, 2020 Under the slow varying ambient electric field, positive leader propagation exhibits steps characterized by intense reilluminations and abrupt elongations. These steps are currently not well understood.
Shengxin Huang +10 more
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Voltage security evaluation based on perturbation method [PDF]
, 2009 This is the post-print version of the final paper published in International Journal of Electrical Power & Energy Systems. The published article is available from the link below. Changes resulting from the publishing process, such as peer review, editing,
Mousavi, A, Rashidinejad, M
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IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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Can the Thermodynamic Hodgkin-Huxley Model of Voltage-Dependent Conductance Extrapolate for Temperature? [PDF]
, 2014 Hodgkin and Huxley (H-H) fitted their model of voltage-dependent conductances to experimental data using empirical functions of voltage. The thermodynamic H-H model of voltage dependent conductances is more physically plausible, as it constrains and ...
Michael D. Forrest +2 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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