Results 51 to 60 of about 31,431,766 (171)

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Genetic algorithms with memory- and elitism-based immigrants in dynamic environments [PDF]

, 2008
Copyright @ 2008 by the Massachusetts Institute of TechnologyIn recent years the genetic algorithm community has shown a growing interest in studying dynamic optimization problems. Several approaches have been devised.
Yang, S, Yang, Shengxiang
core   +1 more source

A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications

International Journal of Nanomedicine, 2019
Mingzhi Dai1,2, Yongbin Hu,3 Changhe Huo,1 Thomas J Webster,4 Liqiang Guo31Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Beijing 315201, People’s Republic of China; 2Center of Materials Science and ...
Dai M, Hu Y, Huo C, Webster TJ, Guo L
doaj  

IGZO 2T0C DRAM With V_TH Compensation Technique for Multi-Bit Applications

IEEE Journal of the Electron Devices Society
In this work, we proposed and experimentally demonstrated the novel dual-gate (DG) indium-gallium-zinc oxide (IGZO) two-transistor-zero-capacitance (2T0C) dynamic random-access memory (DRAM) for array-level multi-bit storage. Unlike traditional 2T0C DRAM,
Kaifei Chen, Wendong Lu, Jiebin Niu, Menggan Liu, Fuxi Liao, Xuanming Zhang, Zihan Li, Naide Mao, Kaiping Zhang, Congyan Lu, Bok-Moon Kang, Jiawei Wang, Di Geng, Nianduan Lu, Guilei Wang, Zhengyong Zhu, Guanhua Yang, Chao Zhao, Arokia Nathan, Ling Li, Ming Liu   +20 more
doaj   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Memory Fault Simulator for Static-Linked Faults [PDF]

, 2006
Static linked faults are considered an interesting class of memory faults. Their capability of influencing the behavior of other faults causes the hiding of the fault effect and makes test algorithm design and validation a very complex task.
Di Natale, Giorgio, Bosio, Alberto, A. Benso, P. Prinetto, A. Bosio, Benso, Alfredo, S. Carlo, Prinetto, Paolo Ernesto, G. Natale, Di Carlo, Stefano   +9 more
core   +1 more source

Suppressing the Capacitive Coupling by Adjusting the Precharge Biasing Scheme in a Two-Transistor Dynamic Random-Access Memory Operation

IEEE Access
In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a two-transistor dynamic random-access memory (2T DRAM), is ...
Ju Hong Min, Jihun Kang, Jang Hyun Kim, Seongjae Cho   +3 more
doaj   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source