Results 61 to 70 of about 31,431,766 (171)

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

, 2017
A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory.
F. M. Simanjuntak, R. Aluguri, Aluguri, R., Tseng, T.-Y., T.-Y. Tseng, Kumar, D., D. Kumar, Simanjuntak, F. M.   +7 more
core   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

Advanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa, Pietro Belleri, Zsolt M. Kovács‐Vajna, Paschalis Gkoupidenis, Fabrizio Torricelli   +4 more
wiley   +1 more source

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source

A Reliability-Boosted Ferroelectric Random Access Memory With Random-Dynamic Reference Cells

, 2014
Generating reference signal is indispensable and challenging in ferroelectric random access memory using one-transistor and one-capacitor architecture.
Jia, Ze, Liu, Zhiwei, Liu, Jizhi, Liou, Juin J., Liu, Haiyang   +4 more
core   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo, Scionti, A., Alessandro Savino, Alberto Scionti, Paolo Prinetto, Prinetto, Paolo Ernesto, Di Carlo, Stefano, Savino, Alessandro   +7 more
core   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Memory-based immigrants for genetic algorithms in dynamic environments [PDF]

, 2005
Copyright @ 2005 ACMInvestigating and enhancing the performance of genetic algorithms in dynamic environments have attracted a growing interest from the community of genetic algorithms in recent years.
Yang, S, Shengxiang Yang, Yang, Shengxiang   +2 more
core   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

Advanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee, Taebin Lim, Seungho Lee, Sunaina Priyadarshi, Jin Jang   +4 more
wiley   +1 more source

High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs. [PDF]

An architecture for three-dimensional integration of dynamic random-access memory that enables higher memory density is presented as a new solution to the bottleneck currently faced in artificial intelligence deployment. The basis of this architecture is

core   +6 more sources