Results 81 to 90 of about 31,431,766 (171)

Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell

, 2010
In this paper, we propose a novel fin and recess-channel metal oxide semiconductor field effect transistor (MOSFET) for sub-50 nm dynamic random access memory (DRAM) cell application.
Jong Pil Kim, Min-Chul Sun, Hyungcheol Shin, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Jae Young Song, Jang-Gn Yun, Byung-Gook Park, Garam Kim   +9 more
core   +1 more source

A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation

Advanced Science, EarlyView.
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu, Hwiho Hwang, Byeongchan Oh, Junmo Lee, Shimeng Yu, Tae‐Hyeon Kim, Hyungjin Kim   +6 more
wiley   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

Advanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao, Xiaojian Zhu, Runsheng Gao, Qian Jiang, Cui Sun, Yi Du, Xuerong Liu, Lixun Wang, Haolong Li, Yuejun Zhang, Run‐Wei Li   +10 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

Advanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh, Ji Eun Kim, Suk Yeop Chun, Su In Hwang, Byung Seok Kim, Young Jae Lee, Ho Won Jang, Jung Ho Yoon   +7 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers

Advanced Science, EarlyView.
Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Caiyun Liu, Ze Long, Zhongyuan Han, Yingying Guo, Yuning Ding, Tianhao Guo, Yuting Tang, Runzhi An, Haoran Ma, Jishan Liu, Hongwei Liang, Hong Yin   +11 more
wiley   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Neuromorphic Devices and Computing for Sensing, Memory, and Control

Advanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu, Nicholas Schaffer, Xiao Yang   +2 more
wiley   +1 more source

Register Efficient Dynamic Memory Allocator for GPUs

, 2015
We compare five existing dynamic memory allocators optimized for GPUs and show their strengths and weaknesses. In the measurements, we use three generic evaluation tests proposed in the past and we add one with a real workload, where dynamic memory ...
Vinkler, M., Havran, V.
core   +1 more source