Results 81 to 90 of about 8,192 (300)

Nonlinear optical rectification in asymmetrical semiparabolic quantum wells

open access: yes, 2005
The optical rectification in a semiparabolic quantum well is theoretically investigated. The electronic states in a semiparabolic quantum well are calculated exactly, within the envelope function and the displaced harmonic oscillator approach.
Karabulut, I   +3 more
core   +1 more source

Interfacial Electronic Restructuring in MAPbBr3/rGO Hybrids Enabling Improved Charge Extraction for Efficient Photodetection

open access: yesAdvanced Materials Interfaces, EarlyView.
MAPbBr3/rGO hybrids exhibit interfacial electronic restructuring that enhances charge extraction in photodetectors. The incorporation of rGO modifies the surface chemical environment, enhances electron‐dominated transport, and suppresses performance degradation, resulting in higher responsivity, detectivity, and photostability than in pristine MAPbBr3 ...
Mohammed Misbah Uddin   +4 more
wiley   +1 more source

Electrical rectification from aligned diodesbased on the donor-(π-bridge)-acceptor molecules

open access: yes, 2007
As traditional devices containing silicon transistors begin to approach their physical limits, new systems composed of organic molecules are being considered for molecularscale devices of the future.
Chwialkowska, Anna
core  

Recent Advances of Slip Sensors for Smart Robotics

open access: yesAdvanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang   +8 more
wiley   +1 more source

Rectifying and Photoconductive Responses in Graphene–Double-Insulator–Graphene (GI2G) Structures

open access: yesC
Advanced solar energy-harvesting devices, such as optical rectennas, typically use metal–insulator–metal diodes because of the ultrafast response of these diodes at high frequencies. However, the diode performance is limited by weak current–voltage (I–V)
Takashi Uchino   +5 more
doaj   +1 more source

Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes

open access: yesAdvanced Materials Technologies, EarlyView.
Schottky diodes based on solution processed sustainable zinc—tin–oxide thin films present an eco‐friendly and versatile alternative to conventional CMOS based technologies. Beyond state‐of‐the‐art performance for vertically stacked solution‐based oxide diodes was achieved, including rectification ratios exceeding nine orders of magnitude, and intrinsic
Carlos Silva   +10 more
wiley   +1 more source

Optical rectification in semiconductor waveguides

open access: yes, 2002
In this thesis, we study optical to microwave conversion and generation of ultrashort electrical pulses by the use of optical rectification at telecommunication wavelengths, λ = 1550 nm.
Loyo-Maldonado, Valentin
core  

Upcycling Compact Discs Into Ultra‐Stable, Flexible, and Stretchable Nanoporous Gold Electrodes for Enhanced Biosensing Performance

open access: yesAdvanced Materials Technologies, EarlyView.
This article highlights the development of robust and high‐performance flexible and stretchable biosensors that maintain long‐term functionality and optimal electrical conductivity under mechanical deformation, utilizing sustainable and cost‐effective manufacturing principles.
Mousa H. Aldosari, Ahyeon Koh
wiley   +1 more source

Optical Rectification and Carrier Injection Phenomena in Nonlinear Optical Crystals [PDF]

open access: yes
The optical rectification (dc effects) resulted from the second or thirdorder nonlinear polarization induced by a Q-switching high power ruby laser were experimentally investigated utilizing optical crystals such as KDP, LiNbO_3 and LiIO_3.
ムトウ, シンゾウ   +6 more
core   +1 more source

Surface‐Plasmon‐Coupled Blue InGaN/GaN Micro‐LEDs with Oxide–Metal–Oxide Capping Layer Compatible to Chip Fabrication Process

open access: yesAdvanced Optical Materials, EarlyView.
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang   +17 more
wiley   +1 more source

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